Browsing by Author "Chao Yu-Chiang"

Now showing 1 - 12 of 12

Label-free sensor
(2012-07-10)
Meng Hsin-Fei
;
Hong Sheng-Fu
;
Chao Yu-Chiang
;
Liu Chien-Cheng
;
Liu Wen-Hsing
The invention provides a label-free sensor that includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and being in contact with the first electrode and the second electrode. The semiconductor layer has a plurality of probe groups bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance having bonding specificity with the probe groups. The semiconductor layer is bonded with the probe groups, and the detection of detected object is performed in an instant, quick, rapid, and sensitive manner by measuring variation in electric current, avoiding the use of fluorescent reading equipment for reading fluorescent signals.
Method for forming vertical type sensor
(2014-11-04)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
METHOD FOR FORMING VERTICAL TYPE SENSOR
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
PRESSURE DETECTOR AND PRESSURE DETECTOR ARRAY
(2011-05-12)
Meng Hsin- Fei
;
Horng Sheng-Fu
;
Chao Yu-Chiang
;
Chen Chun-Yu
;
Lai Wei-Jen
A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
Pressure detector and pressure detector array
(2012-09-04)
Meng Hsin- Fei
;
Horng Sheng-Fu
;
Chao Yu-Chiang
;
Chen Chun-Yu
;
Lai Wei-Jen
A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
SOLAR CELL AND FABRICATION METHOD THEREOF
(2012-12-27)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Horng Sheng-Fu
;
Chao Yu-Chiang
;
Lin Yuan-Pai
A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.
Vertical electro-optical component and method of fabricating the same
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2012-09-20)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME
(2011-11-24)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Chao Yu-Chiang
A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.
Vertical type sensor
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
VERTICAL TYPE SENSOR
(2012-04-12)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.