Browsing by Author "Chao-Hsin CHIEN"

Now showing 1 - 3 of 3

FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
(2017-05-04)
Chao-Hsin CHIEN
;
Chen-Han CHOU
;
Cheng-Ting CHUNG
;
Samuel C. PAN
A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
(2018-03-01)
Chao-Hsin CHIEN
;
Chi-Wen LIU
;
Chung-Chun HSU
;
Wei-Chun CHI
A method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy comprising components of the first metal layer, second metal layer, and the semiconductor substrate.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(2017-09-28)
Chao-Hsin CHIEN
;
Chi-Wen LIU
;
Chen-Han CHOU
A semiconductor device including a Fin FET device includes a fin structure extending in a first direction and protruding from a substrate layer. The fin structure includes a bulk stressor layer formed on the substrate layer and a channel layer disposed over the bulk stressor layer. An oxide layer is formed on the substrate layer extending away from the channel layer. A source-drain (SD) stressor structure is disposed on sidewalls of the channel layer over the oxide layer. A gate stack including a gate electrode layer and a gate dielectric layer covers a portion of the channel layer and extends in a second direction perpendicular to the first direction.