Browsing by Author "Chen, B."

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Effects of the Inductively Coupled Plasma Nitridation Process on the Reliability of HfAlOx Thin Films
(2009)
Chang, K.
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Chen, B.
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Su, M.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
High-k dielectric such as Hf-based dielectric has been considered to be inevitable for 45-nm CMOSFET technology node. The incorporation of Al in Hf-based dielectrics has been proven as a solution to the problem about thermal stability. Moreover, there have been some researches which describe that the reliability of the high-k dielectrics could be improved by the nitridation process. In this study, we examine the effect of different inductively coupled plasma (ICP) nitridation processes on the reliability of HfAlOx thin films. The hysteresis, stress induced leakage current (SILC) and constant voltage stress (CVS) characteristics of the nitrided HfAlOx thin films were preformed to prove the improvement effect of the plasma nitridation. Based on our experimental results, the ICP nitridation process would be an effective technology to improve the reliability of HfAlOx thin films.
Intercellular transport of endosomes revealed by live imaging in Drosophila
(2015)
Li, Y.
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Yang, W.
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Cheng, L.
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Lin, C.
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Ho, Y.
Intercellular transport of endosomes revealed by live imaging in Drosophila
(2015)
Li, Y.
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Yang, W.
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Cheng, L.
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Lin, C.
;
Ho, Y.
Oxide-Based RRAM: Unified Microscopic Principle for both Unipolar and Bipolar Switching
(2011)
Gao, B.
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Kang, J. F.
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Chen, Y. S.
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Zhang, F. F.
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Chen, B.
A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.