Browsing by Author "Chen, BC"

Now showing 1 - 3 of 3

A new antialiased line drawing algorithm
(2001-04-01)
Chen, BC
;
Ching, YT
;
資訊工程學系
;
Department of Computer Science
Consider a line f`(x) = mx + b, 0 less than or equal to m less than or equal to 1. Conventional line drawing algorithms sample (x,f(x)) on the line, where x must be an integer, and then map (x,f(x)) to the Frame buffer according to the defined filter and its). In this paper, we propose to simulate a sampled point (x,f(x)) by the four pixels around it where x and f(x) are not necessary to be integers. Based on the proposed low-pass filtering, we show that the effect of sampling at infinite number of points along a line segment can be achieved since the closed Form of the intensities assigned to pixels exists. Furthermore, we show the coherence properties that can reduce the cost for computing these intensities. (C) 2001 Elsevier Science Ltd. All rights reserved.
Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
(2003-11-17)
Liu, PT
;
Chang, TC
;
Tsai, TM
;
Lin, ZW
;
Chen, CW
A direct patterning technology of low-permittivity silicate-based polymer is investigated with electron-beam lithography for multilevel interconnections. The smallest feature size of 60 nm for damascene lines can be directly patterned in the silicate film. In this direct patterning, dielectric regions exposed by electron beam are crosslinked and form desirable patterns, while the others are dissolvable in an aqueous solution containing 2.38% tetramethylammonium hydroxide. With an optimum condition of electron-beam lithography, the electron-beam-irradiated silicate exhibits superior dielectric properties than that of the furnace-cured silicate film, due to minimizing the break of Si-H bonds and moisture uptake. The explanation is in agreement with the analyses of Fourier transform infrared spectroscopy and thermal desorption spectroscopy. (C) 2003 American Institute of Physics.
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
(2001-05-01)
Chang, TC
;
Liu, PT
;
Tsai, TM
;
Yeh, FS
;
Tseng, TY
The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.