Browsing by Author "Chen, BT"

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A source-follower type analog buffer using poly-Si TFTs with large design windows
(2005-11-01)
Tai, YH
;
Pai, CC
;
Chen, BT
;
Cheng, HC
;
電子工程學系及電子研究所
New simple source follower circuits using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) as analog buffers for the integrated data driver circuit of active-matrix liquid crystal displays and active-matrix light emitting diodes are discussed. In addition to the threshold voltage difference of driving TFTs, the unsaturated of output voltage arisen from the significant subthreshold current will also result in the difficulty of the buffer circuit design. The proposed circuit is capable of minimizing the variation from both the signal timing and the device characteristics.
High-performance poly-Si thin film transistors crystallized by excimer laser irradiation with a-Si spacer structure
(2005)
Chang, TK
;
Lin, CW
;
Tsai, CC
;
Lu, JH
;
Chen, BT
In this work, high-performance polycrystalline Si thin film transistors have been fabricated by excimer laser crystallization of an amorphous Si film deposited on an array of amorphous Si spacers. The amorphous Si spacers served as seeds for lateral growth during excimer laser irradiation. Large longitudinal grains could be found in the device channel regions. In consequence, the thin-film transistors fabricated with Si spacer structure exhibited a high field-effect mobility of 288 cm(2)/V-s while the mobility of the conventional counterpart was 129 cm(2)/V-s. In addition, the uniformity of the device performance was improved as lateral growth could be artificially controlled. (C) 2004 The Electrochemical Society.
New pixel circuits for driving active matrix organic light emitting diodes
(2006-02-01)
Chen, BT
;
Tai, YH
;
Kuo, YJ
;
Tsai, CC
;
Cheng, HC
New pixel circuit designs for active matrix organic light emitting diodes (AMOLEDs), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) were proposed and verified by SPICE simulation and fabrication results. Threshold voltage compensation pixel circuits consisting of five TFTs, one additional control signal, and one storage capacitor were used to enhance display image uniformity. The simulation and measured results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics. (c) 2006 Elsevier Ltd. All rights reserved.