Browsing by Author "Chen, Bwo-Ning"

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National Project on 45 to 32 nm Metal Oxide Semiconductor Field Effect Transistors for Next Century IC Fabrications
(2008)
Hwang, Huey-liang
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Wang, C. W.
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Chang, K. H.
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Tsai, C. H.
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Leou, K. C.
It is well known that the Taiwan Semiconductor industries play the very key roles for the worldwide IC foundry, and the advanced research of nanoelectronics is the lifeline for its long term developments. Professor Huey-liang Hwang effectively integrated the most outstanding research team and resource in Taiwan on the National Project on Nanometer CMOS Transistors for the 21 century, which is sponsored by the Ministry of Economic Affairs of ROC. A dozen of Professors from NTHU( National Tsing Hua University) with expertise at the novel materials and analysis and NCTU( National Chiao Tung University) with expertise at devices and reliability are devoted to the studies and are in collaboration with the world-wide-known company such as TSMC, and breakthrough of the key technologies of 45-32 nm technologies are achieved. The objective of this project is focused on the development of advanced metal gate/high-k MOSFET for 45 nm node generation and beyond, the efforts include the world first successful suppression the oxide/Si interfacial layer formation by using a bi-layer composite of HfO2 3.2 nm (ALD)/HfO2 1.5 nm (MBE), the results show a dielectric constant of 16 and an EOT of 1.15 nm, a Dit was estimated to be 4.6x10(11)cm(-2)eV(-1) with the leakage at Vfb-1V being 8.5x10(-6) A/cm(2). Also, the thermal stability of HfO2, HfAlOx alloy and Al2O3/HfO2 stack, prepared by ALD were compared, the incorporation of Al in alloy form gave superior characteristics by retaining an amorphous structure up to 1000 C, which suppress the leakage current and retards growth of the interfacial layer giving the least increment of EOT and interface traps. Besides, by incorporating Al into TiO2 gave an EOT value of the Al2O3/TiAlOx/Al2O3 film down to 0.8 nm. Furthermore, high selectivity was obtained via etching the HfAlO and silicon wafer with pattern using the ICP Plasma. In this project, YbSi metal gate for n-MOSFET and IrSi metal gate p-MOSFET were successfully fabricated for the HfAlON MESFET. The results showed the good effective workfunction of 4.15 and 4.9 eV and no degradation of gate dielectric current and mobility in the YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reducing the metal diffusion at lower temperatures.
The effects of plasma treatment on the thermal stability of HfAlOx thin films
(2007)
Chang, Kow-Ming
;
Chen, Bwo-Ning
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Huang, Shih-Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
The effects of plasma treatment on the thermal stability of HfO(2) thin films
(2008-07-30)
Chang, Kow-Ming
;
Chen, Bwo-Ning
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Huang, Shih-Ming
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The thermal stability of pure HfO(2) thin films is not high enough to withstand thermal processes, such as S/D activation or post-metal annealing, in modern industrial CMOS production. In addition, plasma nitridation technology has been employed for increasing the dielectric constant of silicon dioxide and preventing boron penetration. In this experiment, atomic layer deposition (ALD) technology was used to deposit HfO(2) thin films and inductively coupled plasma (ICP) technology was used to perform plasma nitridation process. The C-V and J-V characteristics of the nitrided samples were observed to estimate the effect of the nitridation process. According to this study, plasma nitridation process would be an effective method to improve the thermal stability of HfO(2) thin films. (C) 2008 Elsevier B. V. All rights reserved.
The Improvement Effect of the Plasma Nitridation Process to the Reliability of HfO(2) thin films
(2009)
Chang, Kow-Ming
;
Chen, Bwo-Ning
;
Tang, Chun-Kai
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
There have been some researches which describe that the thermal stability and the dielectric constant of the high-k dielectrics could be improved by the nitridation process. In this study, we examined the effect of different ICP plasma nitridation process to the reliability of HfO(2) thin films. The capacitance-voltage and current-voltage characteristics of nitrided samples were observed to decide the most suitable process time. The hysteresis, stress induced leakage current (SILC) and constant voltage stress (CVS) characteristics of the nitrided samples were preformed to verify the improvement effect of the plasma nitridation. According to this study, the ICP plasma nitridation process would be an effective technology to improve the reliability of pure HfO(2) thin films.