Browsing by Author "Chen, C."

Now showing 1 - 14 of 14

A Novel Thermomagnetic Gripper.
(2015-01-01)
Chen, C.
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Chung, T.
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交大名義發表
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National Chiao Tung University
Anisotropic grain growth and crack propagation in eutectic microstructure under cyclic temperature annealing in flip-chip SnPb composite solder joints
(2013-07-01)
Liang, Y. C.
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Lin, H. W.
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Chen, H. P.
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Chen, C.
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Tu, K. N.
The evolution of eutectic structure under temperature cycling tests (TCTs) in SnPb composite solder joints has been investigated. After 500 cycles of TCT, the Sn grains coarsened and developed anisotropic stripes close to the necking site in the solder joint because of stress-induced atomic migration. Then, cracks triggered by thermal stress were observed to propagate along the Sn stripe interfaces. After a prolonged 14,410 cycles of TCT, the cracks expanded across the entire solder joint and led to electrical open failure. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Co-delivery of paclitaxel and cetuximab by nanodiamond enhances mitotic catastrophe and tumor inhibition.
(2015)
Chao, J. I.
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Liao, W. S.
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Lin, Y. W.
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Lin, J.
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Cheng, H. C.
Co-delivery of paclitaxel and cetuximab by nanodiamond enhances mitotic catastrophe and tumor inhibition.
(2015)
Chao, J. I.
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Liao, W. S.
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Lin, Y. W.
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Lin, J.
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Cheng, H. C.
Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS
(2006-08-01)
Chin, Albert
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Chen, C.
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Yu, D. S.
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Kao, H. L.
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McAlister, S. P.
High mobility channel materials such as Ge and compound semiconductors (CS) show promise for future generation MOSFETs. The challenge is to integrate these materials with a Si substrate and create good interfaces in the devices. Here we show dislocation-free CSOI and Ge-on-insulator (GOI) devices with good characteristics. The InAlAs/InGaAs/InAlAs-OI on Si MESFETs shows a mobility of 8100 cm(2)/V s. To reduce the leakage current an Al2O3/InGaAs MOSFET was fabricated. Good 451 cm(2)/V S mobility was obtained, higher than the 340 cm(2)/V S of GOI MOSFETs. However the marginally better mobility than GOI and 18X lower mobility than MESFETs indicate that the soft phonon scattering, high-kappa interface scattering and process variations are challenges for CS MOSFETs. In contrast, the GOI CMOS provides a simpler process and significantly higher electron and hole mobilities than its Si counterparts. (C) 2006 Elsevier Ltd. All rights reserved.
Copper-to-copper direct bonding using different (111) surface ratios of nanotwinned copper films
(2019-01-01)
Huang, J. W.
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Shie, K. C.
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Liu, H. C.
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Li, Y. J.
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Cheng, H. Y.
Copper-to-copper direct bonding emerges to be the most important technique for fine pitch packaging in microelectronic devices. Low temperature Cu-to-Cu direct bonding by using highly (111)-oriented nanotwinned Cu (nt-Cu) has been achieved because Cu (111) surface has higher surface diffusiyities. To investigate the bonding effect by using different surface ratio nt-Cu, electroplating under different conditions was performed. The results indicate that bonding with higher (111)-surface ratio copper films would obtain a higher bonding strength of 15% w hen bonding at 300 degrees C.
Crystal Structure of Dihydropyrimidinase from Tetraodon nigroviridis with Lysine Carboxylation: Metal Requirement for Post-translational Modification and Function
(2014-03-01)
Chen, C.
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Hsieh, Y.
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Yang, Y.
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Chan, S. I.
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生物科技學系
Detection of chymase activity using the AuNPs-peptide probe, a specific peptide probe conjugated onto gold nanoparticles
(2018-07-01)
Sun, Y.
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Yeh, F.
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Tseng, I.
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Chang, C.
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Chen, C.
Haptoglobin 2-2 Phenotype Related To Plasma Decoy Receptor 3 Elevation Is Associated With Poor Outcomes In Patients With Acute Respiratory Distress Syndrome
(2010)
Chen, C.
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Yang, K.
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Chen, M.
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Chen, W.
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Wang, W.
Inhibiting the consumption of Cu during multiple reflows of Pb-free solder on Cu
(2011-11-01)
Hsiao, H. -Y.
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Hu, C. -C.
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Guo, M. -Y.
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Chen, C.
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Tu, K. N.
An effective approach to inhibiting the consumption of Cu during multiple reflows of SnAg2.3 solder on Cu is reported. By depositing a very thin layer of solder on Cu, followed by a 10-min reflow, the scallop-type morphology of interfacial Cu(6)Sn(5) inter-metallic compounds (IMC) became flat, and the channels between them closed up. When additional solder was deposited on the sample and reflowed again, the consumption of Cu as well as the growth the IMC was retarded. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Lysine carbamylation for enzymatic function: metal and structural requirements
(2014-08-01)
Hsieh, Y.
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Chan, S.
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Yang, Y.
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Chen, C.
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生物科技學系
Novel Electromagnetic Targeting System for Navigating Surgery in Endobronchoscopy
(2018-01-01)
Chen, C.
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Lin, C.
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Cheng, Y.
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Chung, T.
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Chang, C.
Side Wall Wetting Induced Void Formation due to Small Solder Volume in Microbumps of Ni/SnAg/Ni upon Reflow
(2012)
Liang, Y. C.
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Chen, C.
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Tu, K. N.
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材料科學與工程學系
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Department of Materials Science and Engineering
A processing failure of void formation has been observed in 3D IC microbumps due to small solder volume. We prepared the sandwiched Ni/Sn2.3Ag/Ni microbumps with 4 mu m and 11 mu m thick solders and reflowed them at 260 degrees C to study the mechanism of void formation in the processing. Due to the thin solder, intermetallic compound formation of Ni3Sn4 from the two interfaces of the solder joint can physically bridge each other. When that happens, the degree of freedom of motion in the direction normal to the interfaces is removed. Consequently, when the remaining molten solder is drained by side wall reaction, large voids form in the joint. This is a unique mode of processing failure because of the smaller and smaller volume of solder joints in the trend of miniaturization. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.002204ssl] All rights reserved.
The Inductance Enhancement Study of Spiral Inductor Using Ni-AAO Nanocomposite Core
(2009-05-01)
Hsu, M. C.
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Chao, T. Y.
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Cheng, Y. T.
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Liu, C. M.
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Chen, C.
The letter presents the fabrication and characterization of on-chip spiral inductors with Ni-anodic alumina oxide (Ni-AAO) nanocomposite core. Ni nanorods with 70 nm diameter are deposited and isolated in an AAO matrix to form a layer of nanocomposite on silicon substrate. About 3% inductance enhancement to the inductor with the nanocomposite core has been observed and the enhancement can be kept up more than 6 GHz. Because the proposed inductance enhancement scheme using ferromagnetic-AAO-based nanocomposite as inductor core employs a CMOS-compatible fabrication process with the characteristics that can be further improved, it is our belief that the scheme has a great potential application for future radio frequency integrated circuitry (RFIC) manufacture.