Browsing by Author "Chen, C. -Y."

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Haptoglobin 2-2 Genotype Associates With Poor Acute Respiratory Distress Syndrome Outcomes
(2013)
Chen, C. -Y.
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Mao, S. J. T.
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Yang, K. -Y.
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交大名義發表
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National Chiao Tung University
High Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node Applications
(2016-01-01)
Lee, Y. -J.
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Hong, T. -C.
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Hsueh, F. -K.
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Sung, P. J.
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Chen, C. -Y.
Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) ION and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high I-ON/I-OFF ratio and low subthreshold swing (S.S. similar to 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.
In-Ga-O based double-heater phase change memory cell
(2008)
Wang, S. -L.
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Chen, C. -Y.
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Hsieh, M. -K.
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Lee, W. -C.
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Kung, A. H.
We report a new type of phase-change materials based upon the compound of In-Ga-O. It is found to exhibit two-order of magnitude resistivity change between the high-resistive amorphous phase and the low-resistive cubic phase at a phase-change temperature similar to 250 degrees C. When the In-Ga-O is incorporated into a nonvolatile phase change memory (PCM) device with a double-heater (DH) structure, it exhibits an on/off resistance ratio of 1000 and cycling over 300 times which are superior to those observed on a single-heater (SH) PCM device. These results, together with a low bias point of 70 mu A at 6.5 volt and 1.5mA at 3.5 volt, respectively, for set/ reset operation of the DH-PCM device to the crystalline/amorphous state, suggest that In-Ga-O is a promising material candidate for low power application of PCM devices.
MOTION OF MISCIBLE MAGNETIC FLUIDS IN A VERTICAL CAPILLARY TUBE
(2008-12-01)
Chen, C. -Y.
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Lin, H. -C.
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Tsai, W. -K.
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機械工程學系
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Department of Mechanical Engineering
An experimental study of miscible magnetic fluid motion in a vertical capillary tube is presented. Transporting ferrofluids is dominated by a dimensionless magnetic number Ma, which characterizes the ratio of upward magnetic force to the downward gravity. Two distinct stages of motion, referred to as the sub-critical mode of finite lift and the effective transportation, are identified. These two modes are determined by the values of the sub-critical magnetic number Ma(sub) and critical magnetic number Ma(cr) respectively. For the cases of sub-critical mode (Ma(sub) < Ma < Ma(cr)), the ferrofluids are lifted to quasi-equilibrium heights, which are nearly proportional to the magnetic number Ma. As for the situations of effective transportation (Ma > Ma(cr)), a penetrating finger of ferrofluids is formed similar to the conventional miscible displacements. A dimensionless proportionality of fingertip velocity v, magnetic number Ma and field distribution profile f(z) is obtained as v similar to Ma(1/2) f(z) by scaling arguments. This proportional correlation shows a good agreement with the experiments.
Phase-change memory devices based on gallium-doped indium oxide
(2009-03-16)
Wang, S. -L.
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Chen, C. -Y.
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Hsieh, M. -K.
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Lee, W. -C.
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Kung, A. H.
We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of similar to 250 degrees C with an activation energy of 1.27 +/- 0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In(2)O(3). We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO.