Browsing by Author "Chen, C. F."

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Electromigration in Sn-Cu intermetallic compounds
(2009-01-15)
Wei, C. C.
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Chen, C. F.
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Liu, P. C.
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Chen, Chih
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材料科學與工程學系
As the shrinking in bump size continues, the effect of intermetallic compounds (IMCs) on electromigration becomes more pronounced. Electromigration in Sn-Cu intermetallic compounds was examined using edge displacement method. It was found that Cu(6)Sn(5) compounds are more susceptible to electromigration than Cu(3)Sn compounds. The lower solidus temperature and higher resistivity of the Cu(6)Sn(5) IMCs are responsible for its higher electromigration rate. Length-dependent electromigration behavior was found in the stripes of various lengths and the critical length was determined to be between 5 and 10 mu m at 225 degrees C, which corresponded to a critical product between 2.5 and 5 A/cm. Furthermore, the Sn-Cu compounds were proven to have better electromigration resistance than eutectic SnAgCu solder.
Field emission characteristics of chromium carbide capped carbon nanotips
(2006-11-25)
Hsu, C. H.
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Chen, C. F.
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Lo, H. C.
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材料科學與工程學系
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Department of Materials Science and Engineering
In this study, field emission characteristics of two carbon based nanomaterials, carbon nanotips and chromium carbide capped carbon nanotips, were discussed. Both of these materials were synthesized by bias-assisted microwave plasma chemical vapor deposition with hydrogen and methane as reactants. Ultra-sharpness of the carbon nanotips and the composite structure of chromium carbide capped carbon nanotips have shown unique structural and electrical properties. I-V measurements were carried out to investigate the field emission characteristics. The chromium carbide capped carbon nanotips showed superior field emission stability compared to carbon nanotips under constant current emission. (c) 2006 Elsevier B.V. All rights reserved.
MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)
(2009)
Chien, W. C.
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Chen, Y. C.
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Chang, K. P.
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Lai, E. K.
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Yao, Y. D.
The multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.