Browsing by Author "Chen, Chen-Chia"

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An optical programming/electrical erasing memory device: Organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots and poly(3-hexylthiophene)
(2009-08-01)
Chiu, Mao-Yuan
;
Chen, Chen-Chia
;
Sheu, Jeng-Tzong
;
Wei, Kung-Hwa
;
材料科學與工程學系
An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (- 10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes, (C) 2009 Elsevier B.V. All rights reserved.
Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors
(2009-02-01)
Sheu, Jeng-Tzong
;
Huang, Po-Chun
;
Sheu, Tzu-Shiun
;
Chen, Chen-Chia
;
Chen, Lu-An
We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH(3) plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 10(8)), and a virtual absence of drain-induced barrier lowering (1.3 mV/V).
Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film
(2008-11-17)
Huang, Ching-Mao
;
Liu, Yung-Sheng
;
Chen, Chen-Chia
;
Wei, Kung-Hwa
;
Sheu, Jeng-Tzong
This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymer thin film. The Al/PS-b-P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2x10(5), an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 10(4) s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.
Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment
(2012-03-01)
Huang, Po-Chun
;
Chen, Lu-An
;
Chen, Chen-Chia
;
Sheu, Jeng-Tzong
;
材料科學與工程學系
In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance. (C) 2011 Elsevier B.V. All rights reserved.
Multi-layer planar micro-coils chip as actuators and heaters for biological applications
(2012)
Chen, Chen-Chia
;
Hsu, Shih-Hsun
;
Sang, Chen-Hsiang
;
Yang, Chih-Chyau
;
Wu, Chien-Ming
In this paper, a multi-functional of multi-layer planar micro-coils chip is demonstrated to play as actuators and heaters. For playing as actuators, the micro-coil generate local magnetic field with applied current of 15 mA to quickly manipulated magnetic beads to center of micro-coil within one minute. For functioning as heaters, the micro-coil heater can be quickly heated up to denatured temperature of 95 degrees C with input power of 50.5 mW, and its heating and cooling rate are 19.7 and 11.8 degrees C/s, respectively. For the typical 25 polymerase chain reaction (PCR) cycles, it took only 770 seconds. To further shrink and optimize the multi-layer planar micro-coils chip can be possibly used to manipulate single cell with magnetic beads to specific region and analyze its gene sequence by using single cell PCR technique.
Performance of Dual-Channel Gate-All-Around Polysilicon Nanowire Thin-film Transistor
(2008)
Huang, Po-Chun
;
Sheu, Tzu-Shiun
;
Chen, Chen-Chia
;
Chen, Lu-An
;
Sheu, Jeng-Tzong
Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots
(2008-04-07)
Chen, Chen-Chia
;
Chiu, Mao-Yuan
;
Sheu, Jeng-Tzong
;
Wei, Kung-Hwa
;
材料科學與工程學系
This paper describes the optical responses and memory effects of poly(3-hexylthiophene) (P3HT)/CdSe quantum dot (QD) thin-film transistors (TFTs). TFTs incorporating P3HT/CdSe QD blends as the active layer exhibited higher photocurrents than did the corresponding P3HT-only devices because the heterojunction between P3HT and the CdSe QDs enhanced the separation of excitons. Moreover, the CdSe QDs served as trap centers so that the memory effect was maintained for several hours, even when the device was operated without a gating voltage. Here, we demonstrate the potential applicability of such P3HT/CdSe QD TFTs through repeated optical programming and electrical erasing. (C) 2008 American Institute of Physics.
Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof
(2010-12-23)
Sheu, Jeng-Tzong
;
Chen, Chen-Chia
The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel comprises a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.
SENSING ELEMENT, MANUFACTURING METHOD THEREOF, AND BIOLOGICAL DETECTION SYSTEM EMPLOYING SUCH SENSING ELEMENT
(2010-03-25)
Sheu, Jeng-Tzong
;
Chen, Chen-Chia
;
Li, Yaw-Kuen
;
Chang, Ko-Shing
A sensing element includes a field-effect transistor (FET) with an ultra-thin channel, a reference electrode, a first and a second passivation layer, and a microchannel. The first and the second passivation layer enclose a first and a second portion of the FET, respectively. The microchannel is bonded to the first and the second passivation layer, such that the microchannel is extended across the channel of the ultra-thin channel FET. The ultra-thin channel has a chemically or physically modified surface. When an analyte to be tested passes through the microchannel and is in contact with the modified surface of the ultra-thin channel, it results in changes in the conductance of the ultra-thin channel FET. Trace detection may be conducted on the analyte by observing changes in the conductance. A method for manufacturing the sensing element and a biological detection system employing the sensing element are also provided.