Browsing by Author "Chen, Chi-Wen"

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Bipolar resistive switching of chromium oxide for resistive random access memory
(2011-08-01)
Chen, Shih-Cheng
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Chang, Ting-Chang
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Chen, Shih-Yang
;
Chen, Chi-Wen
;
Chen, Shih-Ching
This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
(2011)
Chen, Shih-Cheng
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Chang, Ting-Chang
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Chen, Shih-Yang
;
Li, Hung-Wei
;
Tsai, Yu-Ting
This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr(2)O(3)-based resistive random access memory (RRAM) with Pt/Cr(2)O(3)/TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/Cr(2)O(3) and Cr(2)O(3)/TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr(2)O(3) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518710] All rights reserved.
Evaluating critical rainfall conditions for large-scale landslides by detecting event times from seismic records
(2018-11-06)
Kuo, Hsien-Li
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Lin, Guan-Wei
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Chen, Chi-Wen
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Saito, Hitoshi
;
Lin, Ching-Weei
One purpose of landslide research is to establish early warning thresholds for rainfall-induced landslides. Insufficient observations of past events have inhibited the analysis of critical rainfall conditions triggering landslides. This difficulty may be resolved by extracting the timing of landslide occurrences through analysis of seismic signals. In this study, seismic records of the Broadband Array in Taiwan for Seismology were examined to identify ground motion triggered by large landslides that occurred in the years 2005 to 2014. A total of 62 landslide-induced seismic signals were identified. The seismic signals were analyzed to determine the timing of landslide occurrences, and the rainfall conditions at those times - including rainfall intensity (I), duration (D), and effective rainfall (Rt) - were assessed. Three common rainfall threshold models (I -D , I-Rt, and Rt-D) were compared, and the crucial factors of a forecast warning model were found to be duration and effective rainfall. In addition, rainfall information related to the 62 landslides was analyzed to establish a critical height of water model, (I - 1.5) . D = 430.2. The critical height of water model was applied to data from Typhoon Soudelor of 2015, and the model issued a large landslide warning for southern Taiwan.
Examining Hedonic and Utilitarian Bidding Motivations in Online Auctions: Impacts of Time Pressure and Competition
(2015-12-01)
Chang, Chia-Chi
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Chen, Chi-Wen
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交大名義發表
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National Chiao Tung University
Hedonic and utilitarian bidding motivations have seldom been studied in the context of consumer-to-consumer (C2C) online auctions. Drawing on the stimulus-organism-response (S-O-R) framework, this study establishes a structural equation model to examine how competition and time pressure (stimulus) influence bidders\' hedonic and utilitarian motivations (organism) and how these motivations further affect impulse bidding and satisfaction with the bidding process (responses). Our results show that time pressure is a significant predictor of utilitarian motivation but is not significantly related to hedonic motivation. Moreover, hedonic motivation tends to increase impulse bidding, whereas utilitarian motivation discourages it. Finally, this study finds the relationship between impulse bidding and satisfaction to be significant. Our findings contribute to theory by describing the roles that bidders\' hedonic and utilitarian motivations play in C2C online auctions and elucidating the important implications for practice in attracting individuals to bid in such auctions.
Influence of H(2)O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
(2011-01-01)
Chung, Wan-Fang
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Chang, Ting-Chang
;
Li, Hung-Wei
;
Chen, Chi-Wen
;
Chen, Yu-Chun
The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from 0.22 to 0.24 cm(2)/(V s), threshold voltage decreased from 6.6 to 4.4 V, and subthreshold swing changed from 0.77 to 1.27 V/dec. The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526097] All rights reserved.
Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
(2011-01-01)
Chung, Wan-Fang
;
Chang, Ting-Chang
;
Li, Hung-Wei
;
Chen, Chi-Wen
;
Chen, Yu-Chun
The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from 0.22 to 0.24 cm(2)/(V s), threshold voltage decreased from 6.6 to 4.4 V, and subthreshold swing changed from 0.77 to 1.27 V/dec. The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526097] All rights reserved.
Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
(2011)
Tsai, Yu-Ting
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Chang, Ting-Chang
;
Lin, Chao-Cheng
;
Chen, Shih-Cheng
;
Chen, Chi-Wen
The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved.