Browsing by Author "Chen, Chien-Hsun"

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Au Nanoparticle Light Scattering Enhanced Responsivity in Pentacene Phototransistor for Deep-UV Light Detection
(2015-11-01)
Yuan, Shuo-Huang
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Pei, Zingway
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Lai, Hsin-Cheng
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Chen, Chien-Hsun
;
Li, Pei-Wen
In this letter, a pentacene thin-film phototransistor (PTFP) with gold nanoparticles (Au-NPs) decoration in bottom-gate structure was demonstrated. With the Au-NPs, this device is capable of scattering the free-space ultra-violet (UV) irradiation into the pentacene film. Therefore, the PTFP with Au-NPs exhibit 4.5-A/W responsivity with V-GS = 0 V at the wavelength of 240 nm. Meanwhile, an ultimate 32.4-A/W responsivity can be achieved with V-GS = -10 V at the wavelength of 240 nm. Such an excellent spectral response suggests PTFP is capable for used in daily and disposable UV status assessment.
Effect of Hydrogen Dilution on the Intrinsic a-Si:H Film of the Heterojunction Silicon-Based Solar Cell
(2011)
Hsiao, Jui-Chung
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Chen, Chien-Hsun
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Lin, Chao-Cheng
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Wu, Der-Ching
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Yu, Peichen
In this work, effects of a hydrogen dilution ratio on the intrinsic amorphous hydrogenated silicon (i-a-Si:H) film of heterojunction silicon-based (HJS) solar cells were systematically studied. Long lifetime samples were obtained for R <= 5, indicating a good a-Si:H/c-Si interface. The dark conductivity was drastically decreased for R >= 2, indicating a good film quality. Consequently, an optimized power conversion efficiency of the HJS solar cells was obtained at a moderate R between 2 and 5. In contrast to the previous emphasis on long lifetime, the results indicate that both the interface and film qualities are correlated to the hydrogen dilution, which are important to achieve high-efficiency HJS solar cells. We show that the most optimized HJS solar cell exhibits a marked efficiency of 17.27%. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3607981] All rights reserved.
Effects of Ar/N-2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors
(2006-10-01)
Zan, Hsiao-Wen
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Yen, Kuo-Hsi
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Liu, Pu-Kuan
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Ku, Kuo-Hsin
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Chen, Chien-Hsun
In this work, we applied a low-temperature (150 degrees) alumina nitride (AIN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AIN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AIN dielectric greatly lowers the OTFT operating voltage (< 5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (> 10(5)) were also obtained for the AIN-OTFTs.
Fabricating 43-mu m-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates
(2015-01-01)
Du, Chen-Hsun
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Chen, Chien-Hsun
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Wang, Teng-Yu
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Hsiao, Jui-Chung
;
Yeh, Chun-Ming
A 43-mu m-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700 degrees C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%. (C) The Author(s) 2015. Published by ECS. All rights reserved.
Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells
(2013-09-01)
Hsiao, Jui-Chung
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Chen, Chien-Hsun
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Yang, Hung-Jen
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Wu, Chien-Liang
;
Fan, Chia-Ming
This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator
(2007-08-01)
Zan, Hsiao-Wen
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Yen, Kuo-Hsi
;
Liu, Pu-Kuan
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Ku, Kuo-Hsin
;
Chen, Chien-Hsun
This paper reports on the low-voltage (< 5 V) pentacene-based organic thin film transistors (OTFTs) with a hydrophobic aluminum nitride (AlN) gate-dielectric. In this work, a thin (about 50 nm), smooth (roughness about 0.18 nm) and low-leakage AlN gate dielectric is obtained and characterized. The AlN film is hydrophobic and the surface free energy is similar to the organic or the polymer films. The demonstrated AlN-OTFTs were operated at a low-voltage (3-5 V). A low-threshold voltage (-2V) and an extremely low-subthreshold swing (similar to 170 mV/dec) were also obtained. Under low-voltage operating conditions, the on/off current ratio exceeded 106, and the field effect mobility was mobility was 1.67 cm(2)/V s.(c) 2006 Elsevier B.V. All rights reserved.
Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering
(2005-01-01)
Yen, Kuo-Hsi
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Zan, Hsiao-Wen
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Ko, Chueh-Ping
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Liu, Pu-Kuan
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Chang, Tzu-Yueh
We firstly fabricated the organic thin-film transistors with sputtered-AlN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5x10(-4) cm(2)/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.
Toward the Human-Robot Co-Existence Society: On Safety Intelligence for Next Generation Robots
(2009-11-01)
Weng, Yueh-Hsuan
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Chen, Chien-Hsun
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Sun, Chuen-Tsai
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交大工研院聯合研發中心
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NCTU/ITRI Joint Research Center
Technocrats from many developed countries, especially Japan and South Korea, are preparing for the human-robot co-existence society that they believe will emerge by 2030. Regulators are assuming that within the next two decades, robots will be capable of adapting to complex, unstructured environments and interacting with humans to assist with the performance of daily life tasks. Unlike heavily regulated industrial robots that toil in isolated settings, Next Generation Robots will have relative autonomy, which raises a number of safety issues that are the focus of this article. Our purpose is to describe a framework for a legal system focused on Next Generation Robots safety issues, including a Safety Intelligence concept that addresses robot Open-Texture Risk. We express doubt that a model based on Isaac Asimov's Three Laws of Robotics can ever be a suitable foundation for creating an artificial moral agency ensuring robot safety. Finally, we make predictions about the most significant Next Generation Robots safety issues that will arise as the human-robot co-existence society emerges.