Browsing by Author "Chen, Chih-Hsien"

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Analyze fluorescent characteristic of cancer cell using hyperspectroscopic imaging system (HIS)
(2012-01-01)
Hsieh, Yao-Fang
;
Chen, Chih-Hsien
;
Mang, Ou-Yang
;
Duann, Jeng-Ren
;
Chiou, Jin-Chern
Currently, the cancer was examined by diagnosing the pathological changes of tumor. If the examination of cancer can diagnose the tumor before the cell occur the pathological changes, the cure rate of cancer will increase. This research develops a human-machine interface for hyper-spectral microscope. The hyper-spectral microscope can scan the specific area of cell and records the data of spectrum and intensity. These data is helpful to diagnose tumor. This study finds the hyper-spectral imaging have two higher intensity points at 550nm and 700nm, and one lower point at 640nm between the two higher points. For analyzing the hyper-spectral imaging, the intensity at the 550nm peak divided by the intensity at 700nm peak. Finally, we determine the accuracy of detection by Gaussian distribution. The accuracy of detecting normal cells achieves 89%, and the accuracy of cancer cells achieves 81%.
Development of stable micro-crystalline silicon AMLCD
(2007-01-01)
Chang, Chan-Ching
;
Chen, Chih-Hsien
;
Peng, Ya-Hui
;
Lee, Yeong-Shyang
;
Hou, Chih-Yuan
Bottom-gate microcrystalline silicon thin film transistors (mu c-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.
Electrical Properties of Metal-Silicon Nitride-Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
(2008-12-01)
Hsieh, Ming-Ta
;
Chen, Jenn-Fang
;
Yen, Kuo-Hsi
;
Zan, Hsiao-Wen
;
Chang, Chan-Ching
Detailed admittance spectroscopy was performed on a metal-silicon nitride-hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under various operating conditions (accumulation, depletion and full depletion) are presented along with an alternative direct measurement method at room temperature. Admittance spectroscopy shows that the interface states density between silicon nitride (SiN(x)) and a-Si:H can be determined from the depletion equivalent circuit model. The resisivity and activation energy of a-Si:H can also be obtained using the accumulation and depletion equivalent circuit models. These models can be employed easily to monitor the fabrication parameters of thin-films transistors (TFTs) and to accurately and directly obtain the capacitance model parameters of TFTs. [DOI: 10.1143/JJAP.47.8714]
Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy
(2007)
Hsieh, Ming-Ta
;
Chang, Chan-Ching
;
Chen, Jenn-Fang
;
Zan, Hsiao-Wen
;
Yen, Kuo-Hsi
We developed three types of equivalent circuit model to investigate the electrical properties of non-crystalline semiconductor. From the equivalent circuit models, parameters of non-crystalline semiconductor can be easily obtained by admittance spectroscopy. This method also can be utilized in the optimization of device process as well.