Browsing by Author "Chen, Chih-Hung"

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A 1.2 V 114 mW Dual-Band Direct-Conversion DVB-H Tuner in 0.13 mu m CMOS
(2009-03-01)
Kuo, Ming-Ching
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Kao, Shiau-Wen
;
Chen, Chih-Hung
;
Hung, Tsun-Shuen
;
Shih, Yi-Shing
A fully integrated direct-conversion tuner is implemented in 0.13 mu m CMOS technology. A broadband noise-canceling balun LNA with the proposed dual cross-coupling technique helps achieve an overall receiver noise figure from 3.7 to 4.3 dB while consuming only 3.6 mW. The proposed current-mode switching scheme improves the achievable SNIR with a gain step of 15 dB, providing IIP3 improvement of 18 dB and NF degradation of only 6 dB. Moreover, design trade-offs are carefully considered in designing the baseband circuit, which provides wide gain tuning and bandwidth accuracy with a DC offset residual less than 6 mV. The measured maximum SNR values are better than 30 dB over wide input power levels, ensuring robust reception in a mobile environment. All circuit blocks are operated at 1.2 V. As a result, the tuner consumes power as low as 114 mW in the continuous mode. This compact tuner supports both UHF and L-bands, and occupies only 7.2 mm(2) die area.
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
(2006)
Tu, Chun-Hao
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Chang, Ting- Chang
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Liu, Po-Tsun
;
Chen, Chih-Hung
;
Yang, Che-Yu
Solid phase recrystallized polycrystalline silicon thin-film transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near the drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found that fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5x10(15) cm(-2), however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film.
TCGA 2014 COMPUTER GAME TOURNAMENT
(2014-12-01)
Lin, Shun-Shii
;
Chen, Chih-Hung
;
Hsu, Shun-Chin
;
Wu, I-Chen
;
Yen, Shi-Jim