Browsing by Author "Chen, Chun-Heng"

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Advance in next Century nanoCMOSFET research
(2007-10-31)
Hwang, Huey-Liang
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Chiou, Yan-Kai
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Chang, Che-Hao
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Wang, Chen-Chan
;
Lee, Kun-Yu
It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years. (C) 2007 Elsevier B.V. All rights reserved.
Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology
(2020-03-01)
Peng, Yin-Wei
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Chen, Chun-Heng
;
Li, Li-Yu
;
Hsin, Pi-Yu
;
Yu, Peichen
In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 x 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm(2), and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (tau(bulk) >= 10 ms) or low resistivity (rho <= 1 omega center dot cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.
Diffusion-Free Organic Hole Selective Contacts for Silicon Solar Cells
(2019-01-01)
Li, Li-Yu
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Chen, Chun-Heng
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Chiu, Chi-Lin
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Li, You-Lan
;
Meng, Hsin-Fei
The dopant-free carrier selective contacts (CSC) to replace the complex diffusion manufacturing are increasingly explored using a variety of different materials. In this work, we investigate various organic materials, including conductive polymer PEDOT: PSS, fluorescent polymers PFO and Green B, and small molecules DMFL-NPB, to serve as the hole selective con-tact (HSC). By analyzing the lifetime and implied open-circuit voltage, assessing of contact resistivity and band alignment, as well as the device efficiency, we evaluate the potential of soluble organic materials acting as the HSC. The results have shown that PEDOT: PSS could effectively passivate the silicon surface to increases the open-circuit voltage by 31 mV and the short-circuit current density by 2.9 mA/cm(2). Overall, the power conversion efficiency increases from 12.36% to 14.55%
Fabricating 43-mu m-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates
(2015-01-01)
Du, Chen-Hsun
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Chen, Chien-Hsun
;
Wang, Teng-Yu
;
Hsiao, Jui-Chung
;
Yeh, Chun-Ming
A 43-mu m-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700 degrees C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%. (C) The Author(s) 2015. Published by ECS. All rights reserved.