Browsing by Author "Chen, D. Y."

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Structural and optoelectronic properties of Al-doped zinc oxide films deposited on flexible substrates by radio frequency magnetron sputtering
(2011-09-01)
Tseng, C. H.
;
Huang, C. H.
;
Chang, H. C.
;
Chen, D. Y.
;
Chou, C. P.
Al-doped zinc oxide (AZO) thin films were deposited onto flexible polyethylene terephthalate substrates, using the radio frequency (RF) magnetron sputtering process, with an AZO ceramic target (The Al(2)O(3) content was about 2 wt.%). The effects of the argon sputtering pressure (in the range from 0.66 to 2.0 Pa), thickness of the Al buffer layer (thickness of 2, 5, and 10 nm) and annealing in a vacuum (6.6 x 10(-4) Pa), for 30 min at 120 degrees C, on the morphology and optoelectronic performances of AZO films were investigated. The resistivity was 9.22 x 10(-3) Omega cm, carrier concentration was 4.64 x 10(21) cm(-3), Hall mobility was 2.68 cm(2)/V s and visible range transmittance was about 80%, at an argon sputtering pressure of 2.0 Pa and an RF power of 100 W. Using an Al buffer decreases the resistivity and optical transmittance of the AZO films. The crystalline and microstructure characteristics of the AZO films are improved by annealing. (C) 2011 Elsevier BM. All rights reserved.
Structure and properties of GZO thin films grown on ZnO buffer layers
(2011-02-01)
Chu, C. Y.
;
Huang, C. H.
;
Kao, L. M.
;
Chou, C. P.
;
Hsu, C. Y.
Thin gallium-doped zinc oxide (in GZO the Ga(2)O(3) contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) magnetron sputtering. The use of a grey-based Taguchi method to determine the processing parameters of ZnO buffer layer deposition has been studied by considering multiple performance characteristics. A Taguchi method with an L(9) orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performance characteristics in the deposition operations. The effect and optimization of ZnO buffer deposition parameters (rf power, sputtering pressure, thickness, and annealing) on the structure, morphology, electrical resistivity, and optical transmittance of the GZO films are studied. Annealing treatment and reduction in thickness resulted in a decrease in root-mean-square (RMS) surface roughness of the ZnO buffer layer. Using the optimal ZnO buffer layer obtained by the application of the grey-based Taguchi method, the electrical resistivity of GZO films was decreased from 2.94 x 10(-3) to 9.44 x 10(-4) Omega cm and the optical transmittance in the visible region was slightly increased from 84.81% to 85.82%. (C) 2010 Elsevier Ltd. All rights reserved.