Browsing by Author "Chen, F. T."

Now showing 1 - 3 of 3

Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity
(2009)
Chen, Y. S.
;
Lee, H. Y.
;
Chen, P. S.
;
Gu, P. Y.
;
Chen, C. W.
A 30x30 nm(2) HfOx resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 10(6) cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (R-HIGH) and low resistance (R-LOW) are proposed for the array to ensure a good operation window. A thin A1O(x) buffer layer under the HfOx layer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program(PGM)/erase(ERS) disturb immunity.
New Observations on the Regular and Irregular Noise Behavior in a Resistance Random Access Memory
(2014-01-01)
Chen, Scott C. H.
;
Huang, Y. J.
;
Chung, S. S.
;
Lee, H. Y.
;
Chen, Y. S.
In this paper, a new type of noise, different from the conventional Random Telegraph Noise (RTN), has been found and analyzed in a resistance random access memory (RRAM). The regular RTN signal is governed by the trapping and detrapping of the electrons. It will appear regularly with a two-level current and the amplitude of the RTN is smaller. However, an abnormal noise, called giant noise, was observed from the oxygen migration. The amplitude of the giant noise is much larger than the RTN one. Also, two different types of giant noise were observed depending on the movement of the oxygen vacancies. All of the above various types of noise might play an important role in the readout error in an RRAM. Therefore, these noise effects need further attention in the design of RRAM.
The Physical Insights Into an Abnormal Erratic Behavior in the Resistance Random Access Memory
(2013)
Huang, Y. J.
;
Chung, Steve S.
;
Lee, H. Y.
;
Chen, Y. S.
;
Chen, F. T.
The voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.