Browsing by Author "Chen, G"

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High-performance integration of copper interconnects with low-k hydrogen silsesquioxane employing deuterium plasma treatment
(2000)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Lee, JK
The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress. By applying deuterium plasma treatment to HSQ film, however, this degradation was alleviated. In addition, the phenomena of serious Cu penetration were not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis, even in the absence of diffusion barrier layers. This indicates that copper diffusion in low-k HSQ film can be effectively blocked by deuterium plasma post-treatment. Therefore, further improvement in RC reduction can be obtained due to the minimized thickness requirement for conventional barriers such as inorganic Si3N4 and metallic TaN layers.
Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment
(2000-03-01)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Lee, JK
The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress. The leakage current behavior In high-field conduction was well explained by the Poole-Frenkel (P-F) mechanism. By applying deuterium plasma treatment to HSQ film, however, the leakage current was decreased and P-F conduction can be suppressed. In addition, the phenomena of serious Cu penetration were not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy analysis, even in the absence of diffusion barrier layers. This indicates that copper diffusion in low-k HSQ film can be effectively blocked by deuterium plasma post-treatment. Therefore, further improvement in resistance-capacitance reduction can be obtained due to the minimized thickness requirement for conventional barriers such as inorganic Si3N4 and metallic TaN layers. (C) 2000 The Electrochemical Society S0013-4651(99)08-022-2. All rights reserved.
New imidazoles as probes of the active site topology and potent inhibitors of beta-glucosidase
(1998-03-01)
Li, YK
;
Hsu, HS
;
Chang, LF
;
Chen, G
;
應用化學系
Series of 4-arylimidazoles, omega-N-acylhistamines and 4-(omega-phenylalkyl) imidazoles were synthesized in order to probe the active site topology of sweet almond beta-glucosidase. These imidazole derivatives were shown to be very powerful competitive inhibitors. Among the 20 tested compounds, omega-N-benzoylhistamine and 4-(3'-phenylpropyl)imidazole are the most potent inhibitors of the enzyme, with pH-independent K-i values of 0.06 and 0.07 mu M, respectively, The inhibition of 4-(omega-phenylalkyl)imidazoles exhibited an interesting trend as to K-i values: 4-phenylimidazole (6.6 mu M)>4-benzylimidazole (1.4 mu M)>4-(2'-phenylethyl)imidazole (0.82 mu M)>4-(3'-phenylpropyl)imidazole (0.07 mu M)<4-(4'-phenylbutyl)imidazole (0.13 mu M)<4-(5'-phenylpentyl)imidazole (0.3 mu M), This revealed that the imidazole and aryl binding sites (which result from favorable interactions within the corresponding glycone and aglycone binding subsites) are separated by the optimal distance equivalent to the length of a -CH2-CH2-CH2-group, Substitutions of the phenyl moieties of 4-phenylimidazole and 4-benzoylhistamine result in weaker inhibition, These classes of imidazoles are particularly powerful inhibitors of sweet almond beta-glucosidase.