Browsing by Author "Chen, G. L."

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Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes
(2011-08-01)
Wang, C. H.
;
Lin, D. W.
;
Lee, C. Y.
;
Tsai, M. A.
;
Chen, G. L.
The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.
High-performance SrTiO3 MIM capacitors for analog applications
(2006-09-01)
Chiang, K. C.
;
Huang, Ching-Chien
;
Chen, G. L.
;
Chen, Wen Jauh
;
Kao, H. L.
TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.