Browsing by Author "Chen, Guan-Yuan"

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A cascade energy band structure enhances the carrier energy in organic vertical-type triodes
(2013-09-01)
Cheng, Shiau-Shin
;
Ramesh, Mohan
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Chen, Guan-Yuan
;
Fung, Chun-Lin
;
Chen, Li-Ming
Organic vertical-type triodes (OVTs) based on the cascade energy band structure as emitter layer are studied. The electric characteristics were dramatically enhanced while incorporating the cascade energy under current driving and voltage driving modes. The improvement is attributed to that injection carriers can obtain higher energy through a stepwise energy level. When the device has a layered structure of F16CuPC (10 nm)/PTCDI (10 nm)/pentacene (100 nm) in emitter, it exhibits a common-base transport factor of 0.99 and a common-emitter current gain of 225 under current driving mode and exhibits a high current modulation-exceeding -520 mu A for a low collector voltage of -5 V and a base voltage of -5 V and the current on/off ratio of 10(3) under voltage driving mode. Furthermore, we realized first organic current mirror that exhibited out/in current ratio of 0.75 and output resistance of 10(5) Omega by using the OVTs. (C) 2013 Published by Elsevier B.V.
Low-voltage complementary inverters employing organic vertical-type triodes
(2010-04-01)
Cheng, Shiau-Shin
;
Chen, Guan-Yuan
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Chen, Jia-Hao
;
Wu, Meng-Chyi
;
Chu, Chih-Wei
In this study, we report the electrical characterization of complementary inverters fabricated using n- and p-channel organic vertical-type triodes (OVTs) on the same substrate. Because of the similar performance of the p-channel OVT (ON current: similar to 229 mu A; OFF current: similar to 67.6 nA; turn-on voltage: similar to 0.8 V) and n-channel OVT (ON current: 377 mu A; OFF current: 86.9 nA; turn-on voltage: 0.4 V), the complementary inverter combining the n- and p-channel OVTs exhibited a voltage gain of ca. 9 at a low supply voltage of 4 V. (C) 2009 Elsevier B. V. All rights reserved.
Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter
(2009-12-01)
Cheng, Shiau-Shin
;
Chen, Jia-Hao
;
Chen, Guan-Yuan
;
Kekuda, Dhananjay
;
Wu, Meng-Chyi
In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO(3)) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO(3)/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 mu A at V(B) = -5 V and a current ON/OFF ratio of 10(3). Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6. (C) 2009 Elsevier B.V. All rights reserved.