Browsing by Author "Chen, H. W."

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An Energy Efficient FinFET-based Field Programmable Synapse Array (FPSA) Feasible for One-shot Learning on EDGE AI
(2018-01-01)
Kuo, J. L.
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Chen, H. W.
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Hsieh, E. R.
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Chung, Steve S.
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Chen, T. P.
A pure logic 14nm FinFET with capabilities of linearly tunable V-th and excellent retention has been implemented as synapses in neuromorphic system., a Field Programmable Synapse Array (FPSA) has been adopted to replace conventional R-based memory Synapse Array (RSA). Thanks to the wide range of V-t-tuning ability, 200X on/off ratio, and the ultra-small variability, 12%, results showed that the training power and SN ratio of FPSA are 10 times and 50 times smaller than those of the RSA, respectively. Two applications were demonstrated on FPSA array for one-shot learning applications. First, FPSA is used to detect handwritten digits of MNIST dataset. "Learned it by once" can be achieved in this task. Furthermore, FPSA has been applied to recognize goldfish in Cifar 100 dataset after learned the other 4 fish species. With the assistance from one-shot learning, results show the machine learned it faster and better on EDGE. This demonstrates the feasibility of FPSA for low-power and cost-effective synapse-based one-shot learning applications in the AIoT era.
The Demonstration of Gate Dielectric -fuse 4kb OTP Memory Feasible for Embedded Applications in High -k Metal-gate CMOS Generations and Beyond
(2019-01-01)
Hsieh, E. R.
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Chang, C. W.
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Chuang, C. C.
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Chen, H. W.
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Chung, Steve S.
A 4kb macro of One Time Programming (OTP) memory, implemented by a new breakdown, named dielectric fuse (dFuse) breakdown, has been realized on a foundry pure logic 28nm HKMG CMOS platform. The feature size of a unit cell is 1.5T per cell with 7.5F2. The experimental results show that dFuse macro exhibits high programming (PGM) speed of 100ns at 4V, read time smaller than lOns at 0.75V, and excellent data retention under one -month baking at 150 C. More importantly, the program voltage is weakly dependent on the environmental temperature, suitable for automotive applications. This OTP is also expected to be scalable to advanced node such as FinFET and provides an ideal and reliable solution for the storage purpose in loT and 5G era.