Browsing by Author "Chen, Hao-Wen"

Now showing 1 - 3 of 3

Blue GaN-based surface-emitting lasers incorporating a sub-wavelength high contrast grating
(2013-01-01)
Wu, Tzeng-Tsong
;
Wu, Shu-Hsien
;
Chen, Hao-Wen
;
Lu, Tien-Chang
;
Wang, Shing-Chung
Blue GaN-based surface-emitting lasers incorporating a sub-wavelength high contrast grating were reported. The laser characteristics such as threshold energy, degree of polarization and divergence angle were measured to be 0.56 mJ/cm(2), 73% and 12 degrees. (C) 2013 Optical Society of America
Localized Lasing Mode in GaN Quasi-Periodic Nanopillars at Room Temperature
(2013-07-01)
Wu, Tzeng-Tsong
;
Chen, Chih-Cheng
;
Chen, Hao-Wen
;
Lu, Tien-Chang
;
Wang, Shing-Chung
In this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm(2) and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5 degrees and 3.6 mu m, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 x 10(-3). The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.
Mode Localization in Defect-free GaN-based Bottom-up Photonic Quasicrystal Lasers
(2012)
Wu, Tzeng-Tsong
;
Chen, Chih-Cheng
;
Chen, Hao-Wen
;
Lu, Tien-Chang
;
Wang, Shing-Chung
GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers. (C) 2012 Optical Society of America