Browsing by Author "Chen, Ho-Chane"
Now showing 1 - 1 of 1
- Results Per Page
- Sort Options
Item type:Item, Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique(2015) ;Kuo, Ming-Hao ;Chen, Ho-Chane ;Lai, Wei-Ting ;Li, Pei-Wen電子工程學系及電子研究所We demonstrated a novel CMOS approach for the fabrication of high-performance Ge quantum dot (QD) MOSFETs offering great promises as optical switches and transducers for Si-based optical interconnects. Measured photocurrent to dark current ratio (I-ph/I-dark) and photoresponsivities from the Ge QD PT were as high as 272,000 and 1.7 A/W, respectively, under incident power of 20 W at 980 nm illumination. Carrier dynamics in Ge QDs were characterized by applying a depleting voltage pulse to the gate of MOSFET and by time-resolved photoluminescence on Ge QD array.