Browsing by Author "Chen, Hsiao-Yu"

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Co-sputtered Cu/Ti Bonded Interconnects for 3D Integration Applications
(2013)
Chen, Hsiao-Yu
;
Hsu, Sheng-Yao
;
Chen, Kuan-Neng
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved.
Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications
(2012-07-01)
Hsu, Sheng-Yao
;
Chen, Hsiao-Yu
;
Chen, Kuan-Neng
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.
Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded Interconnects
(2013-10-01)
Chen, Hsiao-Yu
;
Hsu, Sheng-Yao
;
Chen, Kuan-Neng
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Electrical evaluation along with the material analysis and reliability investigation of cosputtered Cu/Ti bonded interconnect in 3-D integration is presented in this paper. Diffusion behavior of cosputtered metals under different bonding ambient is evaluated as well. This paper shows that the bonded structure exhibits several interesting features under atmospheric bonding ambient, including self-formed adhesion layer, Cu-Cu bonding, and Ti oxide sidewall passivation. Electrical and reliability investigations of cosputtered Cu/Ti bonded interconnects show an excellent electrical performance and a high stability under a large variety of reliability tests, indicating the potential of using cosputtered Cu/Ti bonded interconnects for 3-D integration applications.