Browsing by Author "Chen, Hsin-Yu"

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An Interconnecting Technology for RF MEMS Heterogeneous Chip Integration
(2010-04-01)
Chao, Tzu-Yuan
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Li, Chun-Hsing
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Chen, Yang Chuan
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Chen, Hsin-Yu
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Cheng, Yu-Ting
An interconnecting technology using a Au-Au thermocompressive bond has been successfully developed for microelectromechanical system (MEMS) heterogeneous chip integration in this paper. The Daisy chain and RF transition structures are both designed and fabricated for the electrical characterization of the interconnect scheme. Measured dc contact resistance is about 14 +/- 5 m Omega for the bonding interface of Ni (1 mu m)/Au (0.4 mu m)/Au (0.4 mu m)/Ni (1 mu m) with a pad size of 40 mu m in diameter. The electrical transition between two chips, which have coplanar waveguides (CPWs) and microstrip lines, respectively, can be well interconnected with less than -15 dB return loss and -1.8 dB insertion loss up to 50 GHz without implementing complex structure designs and extra impedance matching networks in the transition by employing this technology. Meanwhile, it is found that the mechanical strength for the interconnecting bond can be as large as 100 MPa. A low-power RF low-noise amplifier has been successfully designed, fabricated, and utilized in this paper to demonstrate the feasibility of the interconnecting technology for RF MEMS heterogeneous chip integration by integrating a Taiwan Semiconductor Manufacturing Corporation 0.18-mu m RF complimentary metal-oxide-semiconductor chip with a silicon carrier, where high Q MEMS inductors are fabricated and utilized for good circuit performance in terms of excellent impedance matching, power gain, and gain flatness.
Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs
(2020-02-01)
Lee, Shen-Yang
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Chen, Han-Wei
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Shen, Chiuan-Huei
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Kuo, Po-Yi
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Chung, Chun-Chih
In this article, we successfully fabricated nanowire (NW) negative capacitance (NC)-related ferroelectric FETs (FE-FETs) with two structures: trigate (TG) and gate-all-around (GAA). Planar capacitors with a metal-FE-metal (MFM) structure were investigated first. Post-metal annealing (PMA) at 700 resulted in the best ferroelectricity. This condition was considerably different from that of directly stacking onto NWs because of the difference in size and curvature between planar and TG or GAA structures. Because of the addition of an underlying ZrO2 seed layer, Hf ZrxO2 in the gate-stack has been crystallized before the PMA process. In addition, two different gate-stack configurations, MFM-insulator-semiconductor (MFMIS) and metal-FE-insulator-semiconductor (MFIS), were investigated for the GAA structure. We determined that MFMIS displayed considerably more favorable subthreshold behavior and ON-state current compared with MFIS. NC-related phenomena, such as negative drain-induced barrier lowering and negative differential resistance, were observed.
Experimental Demonstration of Performance Enhancement of MFMIS and MFIS for 5-nm x 12.5-nm Poly-Si Nanowire Gate-All-Around Negative Capacitance FETs Featuring Seed-Layer and PMA-Free Process
(2019-01-01)
Lee, Shen-Yang
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Chen, Han-Wei
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Shen, Chiuan-Huei
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Kuo, Po-Yi
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Chung, Chun-Chih
We have experimentally demonstrated fully suspended nanowire ( NW) gate-all-around (GAA) negative-capacitance (NC) field-effect transistors (FETs) with ultrasmall channel dimensions (5-nm x 12.5-nm); they exhibit a remarkable I-on-I-off ratio of over 10(10). This work, for the first time, experimentally studies and compares the structures of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insulator-semiconductor (MFIS) NCFETs. The GAA with the MFMIS structure has a higher on-state current owing to the metallic equal-potential layer and superior S.S.(min) of 39.22 mV/decade. A ZrO2 seed-layer is inserted under Hf Zr1-x O-x (HZO) to improve the ferroelectric crystallinity. Consequently, post-metal annealing (PMA), the conventional crystallization annealing step, can be omitted in the presence of o-phase. The gate current (I-G) is monitored to verify the multi-domain HZO. A negative DIBL of -160 mV/V is observed because of the strong NC effect corresponding to previous simulated results.
Experimental Demonstration of Stacked Gate- All-Around Poly-Si Nanowires Negative Capacitance FETs With Internal Gate Featuring Seed Layer and Free of Post-Metal Annealing Process
(2019-11-01)
Lee, Shen-Yang
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Chen, Han-Wei
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Shen, Chiuan-Huei
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Kuo, Po-Yi
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Chung, Chun-Chih
For the first time, two-layer stacked nanowire gate-all-around (GAA) negative capacitance (NC) field-effect transistors (FETs) with an ultrasmall poly-Si channel that has a size of $5.3\times9$ nm(2) and a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) are experimentally demonstrated. FETs exhibit a remarkable I-on-I-off ratio of more than 10(8). We demonstrated stacked channels, double layers, GAA NC-FET with a threshold voltage ( ${V}_{\textit {TH}}$ ) of 0.61 V, and a superior subthreshold behavior with an average and minimum sub- ${V}_{\textit {TH}}$ slope of 43.85 and 26.84 mV/dec, respectively. An additional ZrO2 seed layer was inserted under the Hf $_{{1-}{x}}$ ZrxO2 layer to improve ferroelectric crystallinity. Thus, the conventional crystallization annealing step can be omitted due to the presence of the orthorhombic phase ( ${o}$ -phase) before further post-metal annealing (PMA).
FacePush: Experiencing Pressure Forces on Face with HMDs
(2018-01-01)
Chang, Hong-Yu
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Tseng, Wen-Jie
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Tsai, Chia-En
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Chen, Hsin-Yu
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Peiris, Roshan Lalintha
FacePush: Introducing Normal Force on Face with Head-Mounted Displays
(2018-01-01)
Chang, Hong-Yu
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Tseng, Wen-Jie
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Tsai, Chia-En
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Chen, Hsin-Yu
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Peiris, Roshan Lalintha
This paper presents FacePush, a Head-Mounted Display (HMD) integrated with a pulley system to generate normal forces on a user's face in virtual reality (VR). The mechanism of FacePush is obtained by shifting torques provided by two motors that press upon a user's face via utilization of a pulley system. FacePush can generate normal forces of varying strengths and apply those to the surface of the face. To inform our design of FacePush for noticeable and discernible normal forces in VR applications, we conducted two studies to identify the absolute detection threshold and the discrimination threshold for users' perception. After further consideration in regard to user comfort, we determined that two levels of force, 2.7 kPa and 3.375 kPa, are ideal for the development of the FacePush experience via implementation with three applications which demonstrate use of discrete and continuous normal force for the actions of boxing, diving, and 360 guidance in virtual reality. In addition, with regards to a virtual boxing application, we conducted a user study evaluating the user experience in terms of enjoyment and realism and collected the user's feedback.
Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
(2019-05-01)
Cheng, Chun-Hu
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Lin, Ming-Huei
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Chen, Hsin-Yu
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Fan, Chia-Chi
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Liu, Chien
In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
NEMO: A new implicit-connection-graph-based gridless router with multilayer planes and pseudo tile propagation
(2007-04-01)
Li, Yih-Lang
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Chen, Hsin-Yu
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Lin, Chih-Ta
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交大名義發表
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National Chiao Tung University
The implicit-connection-graph-based router is superior to the tile-based router in terms of routing graph construction and point querying. However, the implicit connection graph has a higher degree of routing graph complexity. In this paper, a new multilayer implicit-connection-graph-based gridless router called NEMO is developed. Unlike the first implicit-connectiongraph-based router that embeds all routing layers onto a routing plane, NEMO constructs a routing plane for each routing layer. Additionally, each routing plane comprises tiles, not an array of grid points with their connecting edges, and consequently, the complexity of the routing problem decreases. Each grid point then represents exactly one tile or its left-bottom corner such that a tile query is equivalent to any point query inside the queried tile, and a grid maze becomes tile propagation. Furthermore, to accelerate path search, continuous space tiles are combined as a pseudo maximum horizontally or vertically stripped tile. Experimental results reveal that NEMO conducts a point-to-point path search around ten times faster than the implicit-connection-graph-based router. General-purpose routing by NEMO also improves routing performance by approximately 1.69x-55.82x, as compared to previously published works based on a set of commonly used MCNC benchmark circuits.
Pull-Ups: Enhancing Suspension Activities with Body-Scale Kinesthetic Force Feedbacks for Virtual Reality
(2019-01-01)
Ye, Yuan-Syun
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Chen, Hsin-Yu
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Chan, Liwei
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資訊工程學系
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Department of Computer Science
We present Pull-Ups, a suspension kit that can suggest a range of body postures and thus enables various exercise styles of users perceiving the kinesthetic force feedback by suspending their weight with arm exertion during the interaction. Pull-Ups actuates the user's body to move up to 15 cm by pulling his or her hands using a pair of pneumatic artifcial muscle groups. Our studies informed the discernible kinesthetic force feedbacks that were then exploited for the design of kinesthetic force feedback in three physical activities: kitesurfng, paragliding, and space invader. Our fnal study on user experiences suggested that a passive suspension kit alone added substantially to users' perceptions of realism and enjoyment (all above neutral) with passive physical support, while suffcient active feedback can further level them up. In addition, we found that both passive and active feedback of the suspension kit signifcantly reduced motion sickness in simulated kitesurfng and paragliding compared to when no suspension kit (thus no feedback) was provided. This work suggests that a passive suspension kit is cost-effective as a home exercise kit, while active feedback can further level up user experience, though at the cost of the installation (e.g., an air compressor in our prototype).
Surface-Enhanced Raman Scattering Imaging of a Single Molecule on Urchin-like Silver Nanowires
(2011-09-01)
Hsiao, Wei-Han
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Chen, Hsin-Yu
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Yang, Yu-Cheng
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Chen, Yu-Liang
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Lee, Chi-Young
Urchin-like silver nanowires are prepared by reacting AgNO(3)(aq) with copper metal in the presence of cetyltrimethylammonium chloride and HNO(3)(aq) on a screen-printed carbon electrode at room temperature. The diameters of the nanowires are about 100 nm, and their lengths are up to 10 mu m. Using Raman spectroscopy, the detection limit of Rhodamine 6G (R6G) on the urchin-like silver nanowire substrate can be as low as 10(-16) M, while the analytical enhancement factor is about 10(13). Raman mapping images confirm that a single R6G molecule on the substrate can be detected.
The Analysis of Thermal-Induced Phase Transformation and Microstructural Evolution in Ni-Ti Based Shape Memory Alloys By Molecular Dynamics
(2019-01-01)
Chen, Hsin-Yu
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Tsou, Nien-Ti
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材料科學與工程學系
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Department of Materials Science and Engineering
Shape memory alloys has been widely applied on actuators and medical devices. The transformation temperature and microstructural evolution play two crucial factors and dominate the behavior of shape memory alloys. In order to understand the influence of the composition of the Ni-Ti alloys on the two factors, molecular dynamics was adopted to simulate the temperature-induced phase transformation. The results were post-processed by the martensite variant identification method. The method allows to reveal the detailed microstructural evolution of variants/phases in each case of the composition of Ni-Ti. Many features were found and having good agreement with those reported in the literature, such as the well-known Rank-2 herringbone structures; the X-interface; Ni-rich alloys have lower transformation temperature than Ti-rich alloys. In addition, some new features were also discovered. For example, the Ti-rich alloys enabled an easier martensitic transformation; the nucleated martensite pattern determined the microstructural evolution path, which also changed the atomic volume and temperature curves. The results generated in the current study are expected to provide the design guidelines for the applications of shape memory alloys.
Urchin-like Ag Nanowires as Non-enzymatic Hydrogen Peroxide Sensor
(2012-04-01)
Hsiao, Wei-Han
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Chen, Hsin-Yu
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Cheng, Ta-Ming
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Huang, Ting-Kai
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Chen, Yu-Liang
Urchin-like Ag nanowires were prepared by reacting AgNO3(aq) with Cu metal in the presence of cetyltrimethylammonium chloride and HNO3(aq) on a screen printed carbon electrode at room temperature. The diameters of the nanowires were about 100 nm, while the lengths were up to 10 mu m. Cyclic voltammetric experiments using the Ag nanowires as the working electrode showed electrocatalytic H2O2 reduction. The electrode exhibited a high sensitivity of 4705 mu A mM(-3) me cm(-2) from 50 mu M to 10.35 rnM and a measurable detection limit of 10 mu M in amperometric detection. This is the first report on Ag NWs for non-enzymatic H2O2 sensing.