Browsing by Author "Chen, Hsu-Hsin"

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Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors
(2007)
Tsai, Chun-Chien
;
Wei, Kai-Fang
;
Lee, Yao-Jen
;
Lee, I-Che
;
Chen, Hsu-Hsin
In this letter, high-performance low-temperature poly-Silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral silicon grains have been demonstrated by excimer laser crystallization (ELC). Therefore, the proposeed ELC DG TFTs exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs.
High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
(2007-07-01)
Tsai, Chun-Chien
;
Chen, Hsu-Hsin
;
Chen, Bo-Ting
;
Cheng, Huang-Chung
;
電子工程學系及電子研究所
In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon thin-film transistors (TFTs) with excimer laser crystallization have been demonstrated using self-aligned (SA) backside photolithography exposure. The grains with lateral grain size of about 0.75 mu m could be artificially grown in the channel region via the super-lateral-growth phenomenon fabricated by excimer laser irradiation. Consequently, SA-BG TFTs with the channel length of 1 pm exhibited field-effect mobility reaching 193 cm(2)/V center dot s without hydrogenation, while the mobility of the conventional non-SA-BG TFT and conventional SA top-gate one were about 17.8 and 103 cm(2)/V center dot s, respectively. Moreover, SA-BG TFTs showed higher device uniformity and wider process window owing to the homogenous lateral grains crystallized from the channel steps near the BG edges.
High-performance short-channel double-gate low-temperature polysilicon thin-film transistors using excimer laser crystallization
(2007-11-01)
Tsai, Chun-Chien
;
Wei, Kai-Fang
;
Lee, Yao-Jen
;
Chen, Hsu-Hsin
;
Wang, Jyh-Liang
In this letter, high-performance low-temperature polysilicon thin-film transistors (TFTs) with double-gate (DG) structure and controlled lateral grain growth have been demonstrated by excimer laser crystallization. Via a proper excimer laser condition, along with the a-Si step height beside the bottom gate, a superlateral growth of Si was formed in the channel length plateau. Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics, as compared with the conventional top-gate ones. The proposed DG TFTs (W/L = 1/1 mu m) had the field-effect mobility exceeding 550 cm(2)/V . s, an ON/OFF current ratio that is higher than 10(8), superior short-channel characteristics, and higher current drivability. In addition, the device-to-device uniformity could be improved since grain growth could be artificially controlled by the spatial plateau structure.
Periodically lateral silicon grains fabricated by excimer laser irradiation with a-Si spacers for LTPS TFTs
(2007)
Cheng, Huang-Chung
;
Tsai, Chun-Chien
;
Lu, Jian-Hao
;
Chen, Hsu-Hsin
;
Chen, Bo-Ting
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a periodic lateral silicon grain structure have been demonstrated to exhibit high-performance electrical characteristics via the amorphous silicon spacers above the amorphous silicon film crystallized with excimer laser. Amorphous silicon spacers allowed the bottom of the under-layered amorphous silicon film to serve as seed crystals. The periodic grain structure could be artificially controlled via the super lateral growth phenomenon during excimer laser irradiation. Consequently, such periodically large and lateral grains in the TFTs would achieve high field-effect-mobility of 298 cm(2)/V s, as compared with the conventional ones of 128 cm(2)/V s. In addition, the uniformity of device-to-device could be improved due to this location-manipulated lateral silicon grains. (c) 2006 The Electrochemical Society.
Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization
(2007-11-12)
Tsai, Chun-Chien
;
Lee, Yao-Jen
;
Chiang, Ko-Yu
;
Wang, Jyh-Liang
;
Lee, I-Che
In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-mu m-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308 cm(2)/V s as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices. (c) 2007 American Institute of Physics.
Source-Follower Type Analog Buffer Using Low Temperature Poly-Si TFTs for AMLCDs
(2006)
Chen, Bo-Ting
;
Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
;
Chen, Hsu-Hsin
A new source follower circuit for the integrated circuit of AMLCDs is proposed. Active load is added and calibration operation is applied to compensate the circuits. Proposed circuit is capable of minimizing variation from both timing and device variations through measured results, the uniformity and bias effect are discussed.