Browsing by Author "Chen, Huang-Chin"

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One-Step Ge/Si Epitaxial Growth
(2011-07-01)
Wu, Hung-Chi
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Lin, Bi-Hsuan
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Chen, Huang-Chin
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Chen, Po-Chin
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Sheu, Hwo-Shuenn
Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.
Self-carbonized lamellar nano/micro hierarchical structure C/TiO2 and its Li-ion intercalation performance
(2012)
Chen, Po-Chin
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Tsai, Min-Chiao
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Chen, Huang-Chin
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Lin, I-Nan
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Sheu, Hwo-Shuenn
In this study, two new layered titanates, fibrillar TiO2 center dot(CH3COOH)(1.4) and chrysanthemum-like TiO2 center dot(CH3COOH)(0.9) (named as FT and CT) with acetic acid and acetate intercalation have been synthesized by reacting titanium isopropoxide (TTIP) with acetic acid at different temperatures. Furthermore, nano/micro hierarchical structure TiO2 with high TiO2-B/anatse ratio was obtained by annealing the titanate (CT). For use as an anode for lithium ion batteries, uniform carbon coated titanium dioxide with high TiO2-B content was obtained by "self-carbonizing'' CT under argon atmosphere at 350 degrees C, and the compound was named SC-CT350. The capacity of the anode made from SC-CT350 can reach 144 mA h g(-1) under a high charging/discharging rate (10 C) and showed excellent retention ability.
Structural and Electrical Properties of Conducting Diamond Nanowires
(2013-02-27)
Sankaran, Kamatchi Jothiramalingam
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Lin, Yen-Fu
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Jian, Wen-Bin
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Chen, Huang-Chin
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Panda, Kalpataru
Conducting diamond nanowires (DNWs) films have been synthesized by N-2-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C Is X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp(3) diamond and sp(2) graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.
The "cascade effect" of nano/micro hierarchical structure: A new concept for designing the high photoactivity materials - An example for TiO2
(2013-10-01)
Chen, Po-Chin
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Tsai, Min-Chiao
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Yang, Min-Han
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Chen, Ting-Ting
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Chen, Huang-Chin
The chrysanthemum-like TiO2 (CT800) was synthesized. It exhibited excellent photoactivity, which greatly exceeded that of conventional P25. To discover the key factors that governed the photocatalytic properties, the specific reduction of Ag+ ions was carried out and EPR spectra of CT800 were obtained. Both an HADDF image and EDX mapping indicated that the Ag+ ions tended to be reduced close to the center of the micro matrix of CT800. Moreover, the EPR spectra strongly suggest that the excited electrons tended to migrate toward the center of the micro matrix, resulting from a multiple junction, cascade effect, which efficiently reduces the recombination of excited electrons and holes and greatly increases the photoactivity. Additionally, the special morphology of CT800 was responsible for the hot spots at the surface of nano sheets and then contributing to its outstanding photocatalytic activity. Furthermore, the unidirectional electron transfer, because of the cascade effect, by materials of different sizes provides a new avenue for the design of electronic and photoelectrochemical devices. (c) 2013 Elsevier B.V. All rights reserved.
Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-delta
(2016-02-15)
Liu, Chia-Jyi
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Bhaskar, Ankam
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Yuan, J. J.
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Yang, Zong-Ren
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Chen, Shih-Show
We report electrical resistivity, thermopower and Ca K-, Mn L-2,L-3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1-xSixO3-delta with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3-delta exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52% compared to pristine CaMnO3-delta. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.