Browsing by Author "Chen, Hung-Yi"

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BUNDLING WITH QUALITY CHOICE
(2014-12-01)
Chung, Hui-Ling
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Chen, Hung-Yi
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Hu, Jin-Li
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Lin, Yan-Shu
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經營管理研究所
Antitrust authorities consider commodity bundling as an extension of monopoly power to other markets which harms consumers. This paper analyzes quality competition and its effect on consumer surplus for the case of commodity bundling by a multi-product firm in a vertically differentiated industry. When the firm bundles a high quality good, we show that bundling negatively affects the quality of a competing good, consumer surplus, and welfare. When the firm bundles a low quality good instead, bundling raises the quality of a competing good, enhances consumer surplus, and may increase the welfare.
Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment
(2016)
Ho, Yen-Teng
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Chu, Yung-Ching
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Jong, Chao An
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Chen, Hung-Yi
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Lin, Meng-Wei
The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact.
Influences of Contact Metals on the Performances of MoS2 Devices under Strains
(2019-12-19)
Tseng, Sian-Hong
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Chen, Hung-Yi
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Hsu, Wei-Ting
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Wang, Hsiang-Chen
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Li, Yuan-Yao
The growth of large-area MoS2 films was achieved through atmospheric pressure chemical vapor deposition via vapor management in this study. The thickness of the MoS2 film changed upon varying the amount of vapor deposited on the substrate. Gratifyingly, large-area monolayer MoS2 was obtained under controlled conditions. Studies using transmission electron microscopy and second harmonic generation confirmed that the MoS2 films were composed of grains having sizes ranging from 40 to 70 mu m. Flexible MoS2 device arrays were fabricated on a polyimide substrate; the device arrays displayed high spatial uniformity in their carrier transport properties. The contact metals affected the electrical characteristics of the MoS2 devices under strain; the sensitivity of devices featuring Schottky contacts was higher than that of those with ohmic contacts. Importantly, the device arrays exhibit sensitive and endurance performances under strain cycles of up to 10(5) times. These results suggest a means for the feasible growth of large-area single-layer MoS2 films, as well as the exploitation of flexible MoS2 device arrays in strain and human motion sensor applications.
Lateral driving assistance using optical flow and scene analysis
(2007)
Song, Kai-Tai
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Chen, Hung-Yi
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電控工程研究所
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Institute of Electrical and Control Engineering
This paper presents a novel algorithm of image-based motion detection for lateral driving assistance. We propose a feature-based motion detection algorithm, which combines optical-flow estimation and road plane segmentation using FOE concept. The developed algorithm can segment moving objects from a changing background efficiently. Both cars and motorcycles on the lateral side of a driving vehicle can be detected. We have realized the system in a stand-alone image processing platform, which can operate independently on a vehicle using a CMOS image sensor and embedded processor. Experimental results show that the proposed methods are effective to segment moving vehicles from a moving background for lateral safety assistance.
Synthesis of Wafer-Scale WSe2 by WOx Selenization on SiO2 / Si Substrates
(2016)
Chu, Yung-Ching
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Jong, Chao-An
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Ho, Yen-Teng
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Zhang, Ming
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Chien, Po-Yen
Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 x 10(2).