Browsing by Author "Chen, Jem Kun"

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TaN(x) thin films as copper barriers sputter-deposited at various NH(3)-to-Ar flow ratios
(2009-03-01)
Chen, Jem Kun
;
Chan, Chia-Hao
;
Kuo, Shiao-Wei
;
Chang, Feng-Chih
;
應用化學系
To optimize the performance of copper diffusion barriers, we deposited TaN(x) thin films through radio frequency (RF) sputtering at various flow ratios of the reactive gases NH(3) and Ar. The composition of the film changed from Ta(2)N to TaN, as evidenced from deposition rates and N-to-Ta ratios, when we increased the NH(3)-to-Ar flow ratio from 0.075 to 0.3. Furthermore, the structure of the TaN(x) thin film transformed from body-centered cubic (BCC) to face-centered cubic (FCC) to nanocrystalline upon increasing the NH(3)-to-Ar flow rate, as revealed by the three steps in the rate of formation of the TaN(x) films during the sputtering process. When incorporated in Cu/TaN(x)/n(+) np(+) diodes, the thermal stability of the TaN(x) thin film-measured in terms of the leakage current remaining below 3 mu A-increased from 450 to 550 degrees C upon increasing the NH(3)-to-Ar flow ratio from 0.075 to 0.3. It appears that the NH(3)-to-Ar flow ratio influences the properties of TaN(x) films predominantly through modification of the crystal structure. (C) 2008 Published by Elsevier B.V.
TaN(x) thin films deposited through various flow ratios of N(2)/Ar for copper barrier properties
(2008)
Chen, Jem Kun
;
Chan, Chia-Hao
;
Chang, Feng-Chih
;
應用化學系
;
Department of Applied Chemistry
To optimize copper diffusion barriers, TaN(x) thin films for diffusion barriers were prepared by using radio frequency sputtering with various flow ratios of N(2)/Ar as the reactive gas. The component transformed from Ta(2)N to TaN as observed from deposition rates, and N/Ta ratios as N(2)/Ar flow ratios from 0.075 to 0.3. Furthermore, the structural transformations from body- centered cubic through face- centered cubic to nanocrystalline for TaN(x) thin film demonstrated under increase of N2/Ar flow rate, induced three- step stages for formation of TaN(x) films in the sputtering process. The thermal stabilities of the TaN(x) thin film in Cu/TaN(x)/n(+) np(+) diodes suggest that increasing flow ratio of N(2)/Ar from 0.075 to 0.3 enhanced the thermal stabilities from 450 to 550 degrees C under leakage current conditions below 3 mu A. The observation deduces that N2/Ar flow ratios dominated predominantly properties of TaN(x) films through crystal structure for barrier. c 2008 The Electrochemical Society.