Browsing by Author "Chen, Jian Hao"

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High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment
(2007)
Wu, Woei Cherng
;
Lai, Chao Sung
;
Wang, Jer Chyi
;
Chen, Jian Hao
;
Ma, Ming Wen
The superior characteristics of fluorinated HfO2 gate dielectrics were investigated. Fluorine was incorporated into HfO2 thin film by postdeposition CF4 plasma treatment to form fluorinated HfO2 gate dielectrics. Secondary-ion mass spectroscopy results showed that there was a significant incorporation of fluorine atoms at the TaN/HfO2 and HfO2/Si interface. Improvement of the gate leakage current, breakdown voltage, capacitance-voltage hysteresis, and charge trapping characteristics was observed in the fluorinated HfO2 gate dielectrics, with no increase of interfacial layer thickness. A physical model is presented to explain the improvement of hysteresis and the elimination of charge trapping. These results indicate that the fluorinated HfO2 gate dielectrics appear to be useful technology for future ultrathin gate dielectrics. (C) 2007 The Electrochemical Society.
Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
(2007)
Chen, Jian Hao
;
Huang, Tzung Bin
;
Wu, Xiaohua
;
Landheer, Dolf
;
Lei, Tan Fu
In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society.
Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment
(2006-08-14)
Lai, Chao Sung
;
Wu, Woei Cherng
;
Chao, Tien Sheng
;
Chen, Jian Hao
;
Wang, Jer Chyi
In this letter, the effects of pre-CF4 plasma treatment on Si for sputtered HfO2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO2/Si substrate interface for a sample with the CF4 plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF4 plasma treated sample due to the elimination of the interfacial layer between HfO2 and Si substrate. These improved characteristics of the HfO2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO2 film into the Si substrate. (c) 2006 American Institute of Physics.