Browsing by Author "Chen, Jian-You"

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
(2018-07-01)
Wu, Chia-Hsun
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Han, Ping-Cheng
;
Liu, Shih-Chien
;
Hsieh, Ting-En
;
Lumbantoruan, Franky Juanda
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V-th) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V-th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V-th of +2.71 V at I-DS = 1 mu A/mm, a high maximum current density of 820 mA/mm and low on-resistance (R-ON) of 11.1 Omega . mm. The FE device also shows good V-th-temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device Applications
(2019-08-01)
Wu, Chia-Hsun
;
Chen, Jian-You
;
Han, Ping-Cheng
;
Lee, Ming-Wen
;
Yang, Kun-Sheng
A GaN metal-insulator-semiconductor high electronmobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage (V-th) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance (R-ON) and high positive V-th. The designed tri-gate device exhibits a high V-th of +2.61 V at current density (I-DS) = 1 mu A/mm, a high maximum current density (I-DS, MAX) of 896 mA/mm, a low R-ON of 5.0 Omega center dot mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance (R-ON,R- SP) among reported normallyoff GaN device results with BV > 650 V.
Workload-Aware Lifetime Trojan based on Statistical Aging Manipulation
(2017-01-01)
Tseng, Tien-Hung
;
Wang, Shu-Sheng
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Chen, Jian-You
;
Wu, Kai-Chiang
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資訊工程學系
Due to escalating complexity of hardware design and manufacturing, not only are integrated circuits (ICs) designed and fabricated in multiple nations, but also software tools may be supplied worldwide. It makes hardware security become more subject to various kinds of tampering in the supply chain. Hardware Trojan horses (HTHs) can be implanted to facilitate the leakage of confidential information or cause the failure of a system. Reliability Trojan is one of the main categories of HTH attacks because its behavior is progressive and is thus not trivial to be detected, or not considered malicious. In this work, we propose to insert reliability Trojan into a circuit which can finely controls the circuit lifetime as specified by attackers (or even designers), based on manipulating BTI-induced aging behavior in a statistical manner. Experimental results show that, given a specified lifetime target, the resulting lifetime can mostly be bounded within 90% similar to 110% of the target. Instead, in a typical design considering pessimistic corners, the resulting lifetime is usually far longer than the target.