Browsing by Author "Chen, Jyh-Shin"

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Low temperature deposition of high quality single crystalline AlN thin films on sapphire using highly oriented monolayer MoS 2 as a buffer layer
(2020-08-15)
Chien, Hung-Yi
;
Kuo, Po-Chun
;
Kao, Hui-Ling
;
Chen, Jyh-Shin
;
Chen, Meei-Ru
Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering
(2019-04-01)
Hsu, Wei-Fan
;
Lu, Li-Syuan
;
Kuo, Po-Chun
;
Chen, Jie-He
;
Chueh, Wei-Chen
Growing a single-crystalline film on a substrate relies on the compatibility of crystal symmetry and lattice constant between the two materials. Such limitations can be circumvented by introducing van der Waals epitaxy of three-dimensional (3D) crystals on two-dimensional (2D) layered materials. Recently, buffer-assisted growth of III-nitride films on graphene has been demonstrated. However, the low chemical reactivity of graphene surface considerably limits the large-area and single-crystalline growth of planar 3D films on 2D layered materials. Here, we demonstrate that using highly oriented monolayer MoS2 as a buffer layer, single-crystalline AlN thin films can be grown on Si(100) substrates, which possess a different crystal symmetry with the films. The AlN films were grown by helicon sputtering system at low temperature (400 degrees C), showing a very flat surface with a root-mean-square roughness of 1.0 nm and an X-ray rocking curve with a full width at half-maximum of 0.336 degrees, indicating a high-crystalline quality. Because the buffer layer as well as the AlN films were prepared at low temperatures, our results not only pave the way for integrating III-nitride with the Si wafer industry process but also open a new possibility for growing III-nitride thin film on various foreign substrates.