Browsing by Author "Chen, KY"

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CMOS RFIC: Application to wireless transceiver design
(2000-02-01)
Wen, KA
;
Wuen, WS
;
Huang, GW
;
Chen, LP
;
Chen, KY
There is increasing interest using CMOS circuits for highly integrated high frequency wireless telecommunications systems. This paper reviews recent works in transceiver architectures, circuits and devices technology for CMOS RFIC application. A number of practical problems those must be resolved in CMOS RFIC design are also discussed.
Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate
(1998-03-01)
Fan, JC
;
Tsai, CM
;
Chen, KY
;
Wang, SY
;
Lin, G
Low-resistance ohmic conduction across an epitaxially lifted-off(ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. This ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.
Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off
(1997-06-05)
Fan, JC
;
Chen, KY
;
Lin, G
;
Lee, CP
;
電子工程學系及電子研究所
The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n(+)-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.
Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off
(1997-06-05)
Fan, JC
;
Chen, KY
;
Lin, G
;
Lee, CP
;
電子工程學系及電子研究所
The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n(+)-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.