Browsing by Author "Chen, M. S."

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An Electrically Tunable Focusing Pico Projector Using a Liquid Crystal Lens as an Active Optical Element
(2011)
Lin, H. C.
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Chen, M. S.
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Lin, Y. H.
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光電工程學系
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Department of Photonics
An electrically tunable pico projector adapting a liquid crystal (LC) lens as an active optical element is demonstrated. The electrically tunable focusing properties of the pico-projectors with different aperture sizes of the LC lenses are also investigated. The tunable ranges of the electrically tunable pico projectors are 350cm to 14cm. The response times are 1.2sec for the LC lens of 2mm aperture and around 5sec for the LC lens of 4mm aperture. The image performance of the electrically tunable focusing pico projector is demonstrated.
Cell Endurance Prediction from a Large-area SONOS Capacitor
(2009)
Lee, C. H.
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Tu, W. H.
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Gu, S. H.
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Wu, C. W.
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Lin, S. W.
Endurance considerations induced by the degadation of top and bottom oxides are proposed for a SONOS memory. First, a correlation is found between the widespread C-V curves induced by interface generation and cycling numbers (cyc. #). Unlike V-FB (accumulation region), V-T (inversion region) shows a much severe shift. Inter-face state (N-it) is identified as a key factor even when a 2nm bottom oxide is used. Moreover, charge to breakdown (Q(BD)) for an ONO capacitor under positive and negative constant current stress (CCS) is investigated. Our study reveals that QBD of such stacks strongly depends on the top oxide thickness. A field enhancement induced by charges in a trapping nitride layer is the root cause. Based on Weibull statistics, the risk of dielectric breakdown for both blocking layers is then evaluated.
Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell
(2006)
Yeh, C. C.
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Liao, Y. Y.
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Wang, Tahui
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Tsai, W. J.
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Lu, T. C.
The stress effect on the ONO stack layer in a two-bit SONOS-type memory cell is investigated. Our results show that P/E cycles induced stress will generate extra nitride, oxide, and interface traps in the ONO stack layer. Besides, these stress created traps are unstable and will be annealed by additional thermal treatment. Storage electrons escape from stress-created nitride and oxide traps and the trap annealing effects are root causes of charge loss in a SONOS cell.
Liquid crystal cell with graphene electrodes
(2017-01-01)
Marinova, V.
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Tong, Z. F.
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Petrov, S.
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Lin, S. H.
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Chen, M. S.
We demonstrate a graphene-based nematic liquid crystal cells fabricated by photo alignment technique. The modulation characteristics have been measured revealing that photo alignment method shows great potential for protecting the graphene layer on glass substrate during LC device fabrication.
Overall Operation Considerations for a SONOS-based Memory
(2009)
Lee, C. H.
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Tu, W. H.
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Chong, L. H.
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Gu, S. H.
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Chen, K. F.
Erase characteristics of a SONOS-based structure are emulated not only for n(+)-poly and p(+)-poly gates but also for TaN-gate+Al2O3 combination. By incorporating our previous studies, performances including program, erase, and read disturb can be reviewed for both SONOS and TANOS devices. Unsurprisingly, it is hard to satisfy all requirements by using a SONOS device. In a TANOS device, an optimal bottom oxide thickness can be specified with the consideration of the three factors simultaneously. Moreover, it is found that conventional extrapolation methodology is inadequate to predict the lifetime of a TANOS device and tends to under-estimate the tolerable read bias.