Browsing by Author "Chen, Meng-Ping"

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0.18um CMOS Low-Noise Amplifier with two 2(nd)-order notch filters for Ultra-Wideband Wireless Receiver
(2007)
Huang, Che-Cheng
;
Huang, Zhe-Yang
;
Wang, Yen-Chun
;
Hung, Yeh-Tai
;
Chen, Meng-Ping
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2(nd)-order notch fitters and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard CMOS process. The LNA gives 13.1dB maximum power gain between 3.0GHz-4.9GHz and 15.5dB maximum power gain between 6.2GHz-10.2GHz while consuming 21.9mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.2GHz-10.2GHz,a minimum noise figure is 2.5dB and 2.8dB. Input return loss lower than 6.4dB in all bandwidth have been achieved.
A CMOS current reused low-noise amplifier for ultra-wideband wireless receiver
(2008)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Hung, Yeh-Tai
;
Chen, Meng-Ping
;
傳播研究所
A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1GHz - 10.6GHz frequency band, a minimum noise figure of 2.7dB and input return loss lower than -8.7dB have been achieved.
Design considerations on input impedance matching for ultra-wideband low-noise amplifier
(2008)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Chen, Meng-Ping
;
Hung, Yeh-Tai
;
傳播研究所
A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and Is implemented in 0.18um RF CMOS process. The trade off on noise figure and chip area in low-noise amplifier design is discussed. The two LNA (LC and Res) gives 14.5dB gain; 7.2GHz and 7.0GRz 3dB bandwidth (3.1-103GHz and 3.1-10.1GHz) while consuming 22.8mW and 23.8mW through a 1.5V supply. Over the 3.1GHz - 10.3GHz and 3.1GHz-10.1GHz frequency band, a minimum noise figure of 2.6dB and 6.3dB and input return loss lower than -8.8dB and -6.8dB have been achieved.