Browsing by Author "Chen, N. C."

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Damage of light-emitting diodes induced by high reverse-bias stress
(2009-01-15)
Chen, N. C.
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Wang, Y. N.
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Wang, Y. S.
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Lien, W. C.
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Chen, Y. C.
The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse Current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated. (c) 2008 Elsevier B.V. All rights reserved.
Spectral shape and broadening of emission from AlGaInP light-emitting diodes
(2009-10-01)
Chen, N. C.
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Lien, W. C.
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Yang, Y. K.
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Shen, C.
;
Wang, Y. S.
This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3243319]