Browsing by Author "Chen, Nai-Hui"

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Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization
(2016-11-25)
Chen, Nai-Hui
;
Chen, Chien-Hsu
;
Lee, Chien-Ping
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.
Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization
(2016-11-25)
Chen, Nai-Hui
;
Chen, Chien-Hsu
;
Lee, Chien-Ping
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing. (C) 2016 Elsevier B.V. All rights reserved.