Browsing by Author "Chen, Nan-Wei"
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Item type:Item, 12.5-Gb/s Wireless Data Transmission by Using Bias Modulation of NBUTC-PD Based W-Band Photonic Transmitter-Mixer(2010) ;Kuo, F. -M. ;Yen-Lin, Ho ;Shi, J. -W. ;Chen, Nan-WeiJiang, Wen-, Jr.We demonstrated near-ballistic uni-traveling-carrier photodiode based broadband photonic transmitter-mixers with quasi-Yagi radiators fed horn antennas. 100GHz wireless transmission with date rate as high as 12.5-Gb/s via bias modulation under high photocurrent (20mA) has been achieved. (C)2009 Optical Society of AmericaItem type:Item, A W-Band Photonic Transmitter-Mixer Based on High-Power Near-Ballistic Uni-Traveling-Carrier Photodiode (NBUTC-PD) for 1.25-Gb/s BPSK Data Transmission under Bias Modulation(2009) ;Wu, Y. -S. ;Kuo, F. -M. ;Wang, Shao-Ning ;Chen, Nan-WeiShi, J. -WWe demonstrate W-band photonic transmitters-mixers, which are composed of near-ballistic-uni-traveling-carrier-photodiodes and quasi-Yagi antennas without integrating Si-lens. By utilizing it, data-transmission at W-band can be achieved under bias modulation of 1.25-Gb/s BPSK with 5GHz IF signals. (C) 2009 Optical Society of AmericaItem type:Item, A W-Band Photonic Transmitter-Mixer Based on High-Power Near-Ballistic Uni-Traveling-Carrier Photodiodes for BPSK and QPSK Data Transmission Under Bias Modulation(2009-08-01) ;Shi, Jin-Wei ;Kuo, F. -M. ;Wu, Y. -S. ;Chen, Nan-WeiShih, Po-TsungIn this study, we demonstrate wireless binary phase-shift keying (BPSK) and quadrature phase-shift keying (QPSK) data transmission at the-band by use of bias modulation on photonic transmitters-mixers, which are composed of near-ballistic uni-traveling-carrier photodiodes and quasi-Yagi antennas without the integration of an Si-lens. By use of such a device and a novel optical millimeter-wave source with octupling optical frequency, we can successfully achieve 1.25-Gb/s BPSK and 0.625-Gb/s QPSK data-transmission at 105 GHz with 5-GHz intermediate-frequency signals.Item type:Item, Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters(2010-01-01) ;Li, Yu-Tai ;Shi, Jin-Wei ;Huang, C. -Y. ;Chen, Nan-WeiChen, Shu-HanWe describe in detail the characterization of two high-power photonic transmitters based on two different kinds of high-power photodiodes, one a GaAs/AlGaAs based uni-traveling-carrier photodiode (UTC-PD) and the other a separated-transport-recombination photodiode (STR-PD). The diodes operate under optical pulse excitation at the 800 nm wavelength. Both PDs have the same total depletion layer thickness (same theoretical RC-limited bandwidth) and are m integrated with the same broadband micro-machined circular disk monopole antennas to radiate strong sub-THz pulses. However the STR-PD based transmitter exhibits very different dynamic and static performance from that of the UTC-PD based transmitter due to the existence of a low-temperature-grown GaAs (LTG-GaAs) based recombination center inside the active region, and the much thinner thickness of effective depletion layer. Under optical pulse excitation (similar to 480 pJ/pulse), the STR-PD based transmitter exhibits a much lower maximum averaged output photocurrent (1.2 mA versus 0.3 mA) than that of the UTC-PD transmitter, although the radiated electrical pulse-width and maximum peak-power, which are measured by the same THz time-domain spectroscopic (TDS) system, of both devices are comparable. These results indicate that although the recombination center in the STR-PD degrades its DC responsivity, it effectively improves the high-speed and output power performance of the device and eliminates the DC component of the photocurrent, which should minimize device-heating problem during high-power operation. The radiated waveforms of both devices under intense optical pulse illumination also exhibit excellent linearity and strong bias dependent magnitude. This suggests their suitability for application as photonic emitters and possibly as a data modulator in sub-THz impulse-radio communication systems.Item type:Item, Characterization of sub-THz photonic-transmitters based on CaAs-AlGaAs uni-traveling-carrier photodiodes and substrate-removed broadband antennas for impulse-radio communication(2008-07-01) ;Li, Yu-Tai ;Shi, J. -W. ;Huang, Cheng-Yu ;Chen, Nan-WeiChen, Shu-HanA novel photonic transmitter for wireless terahertz (THz) impulse-radio (IR) communication is realized by monolithic integration of a GaAs-AlGaAs-based uni-traveling-carrier (UTC) photodiode with a substrate-removed broadband antenna. The device can radiate strong sub-THz pulses (20-mW peak-power) with a narrow pulsewidth (< 2 ps) and wide bandwidth (100 similar to 250 GHz). The maximum average power emitted by our device, under the same THz time-domain spectroscopic setup, is around ten times higher than that of the low-temperature-grown GaAs-based photoconductive antenna, while with a much lower dc bias (9 versus 35 V). The bias-dependent peak output powers of our devices suggest their suitability for application as a data modulator/emitter for photonic THz IR communication.Item type:Item, Design and Analysis of Waveguide-Coupled Photonic THz Transmitters With an Extremely Wide Fractional Bandwidth(2018-10-01) ;Chen, Nan-Wei ;Wun, Jhih-Min ;Wang, Hao-Chen ;Chao, Rui-LinKoh, ChristopherThe design and analysis of novel waveguide-coupled photonic transmitters, which can have an extremely wide +/- 3-dB fractional optical-to-electrical (O-E) bandwidth at near the tera-hertz (THz) operating frequency regime (100%; 0.1-0.3 THz), are presented. This novel module is composed of a customized WR-10-based wideband antenna and an ultrafast/high-power photodiode with a 0.33-THz 3-dB O-E bandwidth, which is flip-chip bonded onto an aluminum nitride substrate, integrated with an impedance matching circuit as well as a bow-tie radiator to serve as the antenna feed. The WR-10-based dual-ridge horn structure is adopted to realize the extremely wideband antenna because the dominant TEM mode supported by the dual ridges has no cutoff frequency. The proposed antenna exhibits more than 18 dB gain across the whole operating bandwidth (0.1-0.3 THz). With the transmitter operating at an output photocurrent of 10 mA and employing the same dual ridge-horn antenna at the receiving end, we can detect a reasonable power (31.6 mu W) at 0.24 THz through 1 cm wireless transmission.Item type:Item, Photonic Impulse-Radio Wireless 2.5Gbit/sec Data Transmission at W-Band Using Near-Ballistic Uni-Traveling-Carrier Photodiode (NBUTC-PD) Based Photonic Transmitter(2009) ;Kuo, F. -M. ;Li, Yu-Tai ;Shi, J-W ;Wang, Shao-NingChen, Nan-WeiBy using novel near-ballistic uni-traveling-carrier photodiodes (NBUTC-PDs) based W-band photonic transmitter and a mode-locked laser with a 10GHz repetition rate, 2.5Gbit/sec impulse-radio wireless data transmission at 100GHz with 3.3m maximum transmission distance have been demonstrated.Item type:Item, Photonic Impulse-Radio Wireless Link at W-Band Using a Near-Ballistic Uni-Traveling-Carrier Photodiode-Based Photonic Transmitter-Mixer(2010-01-15) ;Kuo, F. -M. ;Li, Yu-Tai ;Shi, J. -W. ;Wang, Shao-NingChen, Nan-WeiA W-band photonic transmitter-mixer, constructed by integrating a planar quasi-yagi radiator for feeding the WR-10 waveguide-based horn antenna and a near-ballistic uni-travelingcarrier photodiode, is used with a mode-locked fiber laser to obtain 2.5-Gb/s impulse-radio (IR) wireless data transmission at around a center frequency of 100 GHz. The bias-modulation technique provides less jitter and a longer maximum transmission distance compared with the technique of modulating the optical pulse train using an electrooptics modulator. Using the bias-modulation technique, we achieve a 2.5-Gb/s IR wireless data transmission.Item type:Item, Sub-THz Photonic-Transmitters Based on GaAs/AlGaAs Uni-Traveling Carrier Photodiode and Micromachined Circular Disk Monopole Antenna for Ultra-wideband Communication(2008) ;Li, Yu-Tai ;Pan, Ci-Ling ;Shi, J. -W. ;Huang, Cheng-YuChen, Nan-WeiBy incorporating GaAs/AlGaAs based uni-traveling-carrier photodiodes with broadband micromachined monopole antennas, the demonstrated photonic-transmitter can radiate strong sub-THz pulses (20mW peak-power) with a wide bandwidth (100 similar to 250GHz), which was measured by another photonic-receiver for ultra-wideband communication. (c) 2008 Optical Society of AmericaItem type:Item, Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna(2007-05-01) ;Li, Yu-Tai ;Shi, J.-W. ;Pan, Ci-Ling ;Chiu, C.-H.Liu, W.-S.We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 mu W, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (> 50 kV/cm) has been eliminated by the use of our device.Item type:Item, W-band 3.75-Gb/s 8PSK Wireless Signal Generation and Transmission via Optical Frequency Octupling and Bias Modulation of NBUTC-PD with Feed-Forward Equalizer(2009) ;Shih, Po-Tsung ;Lin, Chun-Ting ;Huang, Han-Sheng ;Jiang, Wen-JrHsu, Dar-ZuGeneration and transmission of a wireless W-band 8PSK signal with 3.75-Gb/s data rate are experimentally demonstrated. The W-band carrier is generated from millimeter-wave generation with frequency octupling. Bias modulation of a NBUTC-PD is also utilized.Item type:Item, W-Band Vector Signal Generation via Optical Millimeter-wave Generation and Direct Modulation of NBUTC-PD(2009) ;Shih, Po-Tsung ;Lin, Chun-Ting ;Jiang, Wen-Jr ;Wong, Er-ZihChen, Jason (Jyehong)The generation of optical millimeter-wave with frequency 8-tupling is experimentally demonstrated. 625-Mb/sec QPSK data transmission at 105-GHz (W-band) is achieved for the first time using the millimeter-wave generation technique and direct modulation of a NBUTC-PD. (C)2009 Optical Society of AmericaItem type:Item, W-Band Wireless Data Transmission by the Integration of a Near-Ballistic Unitraveling-Carrier Photodiode With a Horn Antenna Fed by a Quasi-Yagi Radiator(2009-11-01) ;Kuo, F. -M. ;Shi, J. -W. ;Wang, Shao-Ning ;Chen, Nan-WeiShih, Po-TsungWe demonstrate a novel W-band photonic transmitter mixer, which is composed of a planar quasi-Yagi radiator for feeding a WR-10 waveguide-based horn antenna and a near-ballistic unitraveling-carrier photodiode. The module demonstrates reasonable coupling loss in terms of the millimeter-wave (MMW) power launched from the integrated radiator into the WR-10 waveguide. With the bias-modulation technique and an optical MMW source, we can successfully achieve a wireless data transmission of 2.5-Gb/s quadrature phase shift keying at a carrier wave frequency of 102.5 GHz with a transmission distance of over 2.3 m.