Browsing by Author "Chen, P"

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A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cell
(2003)
Chung, SS
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Chiang, PY
;
Chou, G
;
Huang, CT
;
Chen, P
In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.
Adaptive finite volume simulation of electrical characteristics of organic light emitting diodes
(2005)
Li, YM
;
Chen, P
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友訊交大聯合研發中心
;
D Link NCTU Joint Res Ctr
In this paper a two-dimensional simulation of organic light emitting devices (OLEDs) using an adaptive computing technique is presented. A set of drift-diffusion equations including models of interface traps is solved numerically to explore the transport property of OLED structures. The adaptive simulation technique is mainly based on the Gummel's decoupling algorithm, a finite volume approximation, a monotone iterative method, a posteriori error estimation, and an unstructured meshing scheme. With this computational approach, we investigate the intrinsic and terminal voltage-current characteristics of OLEDs with respect to different material parameters, thickness of materials, and length of structure.
Electronic transport studies on Sb1-x(SiO2)(x) films
(2005-05-04)
Du, J
;
Li, ZQ
;
Lin, JJ
;
Liu, H
;
Zheng, RK
Sb1-x(SiO2)(x) granular films were prepared by the co-sputtering method with the volume fraction of SiO2, x, ranging from 0 (i.e. pure Sb) to about 30 %. Systematic electronic transport studies, including resistivity, magnetoresistance, Hall effect and Seebeck effect, were carried out against the temperature, magnetic field and volume fraction x of SiO2. With the gradual increase of the SiO2 content, the mean grain size of the Sb decreases, and eventually the film becomes amorphous, as illustrated by the changes of the x-ray diffraction patterns. The temperature coefficient of resistivity also changes its sign from positive to negative, indicating a semimetal-semiconductor or insulator transition. Magnetoresistance studies using the weak localization theory revealed that the electron dephasing time follows approximately a T-2 law. This behaviour indicates that the electron-phonon (e-ph) scattering still dominates the electron dephasing processes in these granular systems with a fair number of SiO2 inclusions. The Hall coefficient decreases monotonically with temperature and with the volume fraction of SiO2. The giant Hall effect is absent in these granular films. Finally, an interesting but rather complicated behaviour of the Seebeck coefficient versus temperature was observed when the volume content of the SiO2 exceeded 18 %.