Browsing by Author "Chen, PS"

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A novel dynamic threshold voltage MOSFET (DTMOS) using heterostructure channel of Si1-yCy interlayer
(2005-10-01)
Shieh, MS
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Chen, PS
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Tsai, MJ
;
Lei, TF
;
電子工程學系及電子研究所
We have demonstrated the fabrication of dynamic threshold voltage MOSFET (DTMOS) using the Si1-yCy(y = 0.005) incorporation inerlayer channel. Compare to conventional Si-DTMOS, the introduction of the Si1-yCy interlayer for this device is realized by super-steep-retrograde (SSR) channel profiles due to the retardation of boron diffusion. A low surface channel impurity with heavily doped substrate can be achieved simultaneously. This novel Si1-yCy channel heterostructure MOSFET exhibits higher transconductance and turn on current.
An analysis of online gaming crime characteristics
(2005)
Chen, YC
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Chen, PS
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Hwang, JJ
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Korba, L
;
Song, R
Purpose - To arouse the public awareness of online gaming-related crimes and other societal influences so that these problems can be solved through education, laws and appropriate technologies. Design/methodology/approach - A total of 613 criminal cases of online gaming crimes that happened in Taiwan during 2002 were gathered and analyzed. They were analyzed for special features then focusing on the tendency for online gaming crime. Related prosecutions, offenders, victims, criminal methods, and so on, were analyzed. Findings - According to our analysis of online gaming characteristics in Taiwan, the majority of online gaming crime is theft (73.7 percent) and fraud (20.2 percent). The crime scene is mainly in internet cafes (54.8 percent). Most crimes are committed within the 12:00 to 14:00 time period (11.9 percent). Identity theft (43.4 percent) and social engineering (43.9 percent) are the major criminal means. The offenders (95.8 percent) and victims (87.8 percent) are mainly male and offenders always proceed alone (88.3 percent). The age of offenders is quite low (63.3 percent in the age range of 15-20), and 8.3 percent of offenders are under 15 years old. The offenders are mostly students (46.7 percent) and the unemployed (24 percent), most of them (81.9 percent) not having criminal records. The type of game giving rise to most of the criminal cases is Lineage Online (93.3 percent). The average value of the online gaming loss is about US$459 and 34.3 percent of criminal loss is between $100 and $300. Research limitations/implications - These criminal cases were retrieved from Taiwan in 2002. Some criminal behavior may have been limited to a certain area or a certain period. Practical implications - Provides a useful source of information and constructive advice for the public who will sense the seriousness and influence of online gaming crimes. Further, this topic may have implications on e-commence, e-services, or web-based activities beyond gaming. Originality/value - Since there is little published research in this area, this paper provides the public with a good and original introduction to a topic of growing importance.
Characteristics of copper films deposited on H(2)-plasma-treated TaN substrate by chemical vapor deposition
(2002-09-01)
Lin, CL
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Chen, PS
;
Chang, CL
;
Chen, MC
;
電子工程學系及電子研究所
This work investigates the chemical vapor deposition Cu films deposited on the TaN substrate with and without an H(2)-plasma treatment prior to Cu film deposition and the effect of postdeposition thermal annealing. The Cu films deposited on the H(2)-plasma-treated TaN substrate have a number of favorable properties over the films deposited on the TaN substrate without the plasma treatment. These include an increased (111)-preferred orientation, smoother film surface, and a larger effective deposition rate. However, the Cu films deposited on the H(2)-plasma-treated substrate have a higher electrical resistivity, presumably due to the smaller, grain size. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. We presume that the H(2)-plasma treatment, resulted in a dense and uniform distribution of hydrogen radicals adsorbed on the substrate surface, leading to the shortening of incubation time and the formation of Cu films with a smoother surface and enhanced (100)-preferred orientation. A combined process including H(2)-plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N(2) ambient, is proposed for the advantage of low-resistivity and high (111)-oriented Cu film deposition. (C) 2002 American Vacuum Society.
Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrate
(2002-01-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Chemically vapor deposited (CVD) Cu films on TiN substrates with and without Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TiN substrate have a number of favorable properties over films deposited on a TiN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and markedly increased ( 111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. A combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed in order to achieve low-resistivity and highly (111)-oriented Cu film deposition. In this way, Cu films with a resistivity of 1.90muOhm.cm and a Cu(111)/Cu(200) peak ratio of 7.08 were obtained.
Defects in Ge+-preamorphized silicon
(1999-11-15)
Chen, PS
;
Hsieh, TE
;
Hwang, YC
;
Chu, CH
;
材料科學與工程學系
This work studied the morphology and annealing behaviors of extended defects in Si subjected to various Ge+ preamorphization and BF2+ implantation conditions. The extended defects formed were near the specimen surface when Ge+ implantation energy and dose amount were low. During subsequent annealing, the end-of-range (EOR) loops were enlarged and then moved out of the specimen. High energy/low dose Ge+ implantation generated a damaged layer which initially transformed into a wide zone containing dislocation loops and rodlike defects in the annealed specimen. As the annealing proceeded, the width of defective zone gradually shrunk so that most of the extended defects could be annihilated by defect rejection/recombination process. In addition to the category II defects found in previous investigations, hairpin dislocations emerged in high energy/high dose Ge+-implanted specimens. In this specimen, rodlike defects and hairpin dislocations could be removed by annealing, while the EOR loops became relatively inert so that their removal would require high temperatures and/or long annealing times. Microwave plasma surface treatment was also carried out to form a nitride layer on specimen surface. Experimental results indicate that in addition to effectively reducing the size of EOR loops, surface nitridation might serve as a vacancy source injecting vacancies into Si to annihilate the interstitials bounded by dislocation loops. Reduction in the defect size was pronounced when bias voltage was added to the plasma process. However, radiation damage might occur with too high of a bias voltage. (C) 1999 American Institute of Physics. [S0021-8979(99)06322-7].
Effects of TaN substrate pretreatment by Ar plasma on copper chemical vapor deposition
(2002-05-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
CVD Cu films deposited on TaN substrates with and without an Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TaN substrate have a number of favorable properties over the films deposited on a TaN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and increased (111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. As the results of Ar plasma substrate pretreatment, we presume that the smoother and amorphous-like surface layer of the TaN substrate enhanced the formation of the most stable (111) texture Cu films, and that the higher substrate surface energy resulted in Cu films with smoother surface and regularly shaped smaller grains. Thus, a combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed for the advantages of low-resistivity and high (111)-oriented Cu film deposition. (C) 2002 The Electrochemical Society.
Effects of the underlayer substrates on copper chemical vapor deposition
(2002-05-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Copper chemical vapor deposition (Cu CVD) on different substrates, including TiN, Ta, and TaN, was studied with regard to the physical property, nucleation, and adhesion of the deposited Cu films. The Cu film deposited on TiN substrate has a number of favorable properties over the films deposited on Ta and TaN substrates: lower electrical resistivity, lower impurity contamination, and higher (111)-preferred orientation. Moreover, CVD of Cu films on TiN substrate has a shorter incubation time and better film adhesion. From the viewpoint of adhesion, microstructure, and physical properties of the Cu film, we may conclude that TiN is a better underlayer substrate than Ta and TaN for Cu CVD. (C) 2002 American Vacuum Society.
Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
(1999-11-01)
Wu, ZC
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Wang, CC
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Wu, RG
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Liu, YL
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Chen, PS
This work investigates the integration of very thin sputtered Ta and reactively sputtered TaN barriers with Cu and a low-dielectric-constant (low-K) layer of poly(arylene ether) (PAE-2). It is found that Cu readily penetrates into PAE-2 and degrades its dielectric strength in metal-insulator semiconductor capacitors of Cu/PAE-2/Si structure at temperatures as low as 200 degrees C. Very thin Ta and TaN films of 25 nm thickness sandwiched between Cu and the low-K dielectric served as effective barriers during a 30 min thermal annealing at temperatures up to 400 and 450 degrees C, respectively. We propose a failure mechanism of outgassing induced gaseous stress of PAE-2 under the Ta film to explain its premature barrier degradation. The TaN barrier did not suffer from this gaseous stress problem because of its stronger adhesion to PAE-2 than that of Ta to PAE-2, leading to a better long-term reliability. (C) 1999 The Electrochemical Society. S0013-4651(99)04-046-X. All rights reserved.
Improved inventory models with service level and lead time
(2005-02-01)
Chu, P
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Yang, KL
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Chen, PS
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工業工程與管理學系
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Department of Industrial Engineering and Management
This paper explores the mixed inventory backorder and lost sales problem in which both the lead time and order quantity are treated as decision variables. In a recent paper on Computers and Operations Research, Ouyang and Wu considered this problem. However, their algorithms might not find the optimal solution due to flaws in their solution procedure. We develop some lemmas to reveal the parameter effects and then present two complete procedures for finding the optimal solution for the models. The savings are illustrated by solving the same examples from Ouyang and Wu's paper to demonstrate the superiority of our revised algorithms. (C) 2003 Elsevier Ltd. All rights reserved.
Iridium(III) complexes with orthometalated quinoxaline ligands: Subtle tuning of emission to the saturated red color
(2005-03-07)
Hwang, FM
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Chen, HY
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Chen, PS
;
Liu, CS
;
Chi, Y
Rational design and syntheses of four iridium complexes (1-4) bearing two substituted quinoxalines and an additional 5-(2-pyridyl) pyrazolate or triazolate as the third coordinating ligand are reported. Single-crystal X-ray diffraction studies of 1 reveal a distorted octahedral geometry, in which two dpqx ligands adopt an eclipse configuration, for which the quinoxaline N atoms and the C atoms of orthometalated phenyl groups are located at the mutual trans-and cis-positions, respectively. The lowest absorption band for all complexes consists of a mixture of heavy-atom Ir(III)-enhanced (MLCT)-M-3 and (3)pipi(*) transitions, and the phosphorescent peak wavelength can be fine-tuned to cover the spectral range of 622-649 nm with high quantum efficiencies. The cyclic voltarnmetry was measured, showing a reversible, metal-centered oxidation with potentials at 0.76-1.03 V, as well as two reversible reduction waves with potentials ranging from -1.61 to -2.06 V, attributed to the sequential addition of two electrons to the more electron-accepting heterocyclic portion of two distinctive cyclometalated CAN ligands. Complex 1 was used as the representative example to fabricate the red-emitting PLEDs by blending it into a PVK-PBD polymer mixture. The devices exhibited the characteristic emission profile of 1 with peak maxima located at 640 nm. The maximum external quantum efficiency was 3.15% ph/el with a brightness of 1751 cd/M-2 at a current density of 67.4 mA/cm(2) and the maximum brightness of 7750 cd/m(2) was achieved at the applied voltage of 21 V and with CIE coordinates of (0.64, 0.31).
Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantation
(1999-03-15)
Chen, PS
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Hsieh, TE
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Chu, CH
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材料科學與工程學系
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Department of Materials Science and Engineering
Carbon ion implantation was employed to annihilate the end-of-range (EOR) defects in Ge+-pre-amorphized Si. Experimental results showed that the efficiency of EOR defect removal depends on the Ge+-pre-amorphization conditions, the location of projected range (R-p) of carbon implant and subsequent annealing conditions. The best defect removal occurred when R-p of carbon implantation was brought close to the amorphous/crystalline (a/c) interface generated by Ge+-pre-amorphization. The higher the annealing temperature, the better the interstitial gettering efficiency of carbon atoms was observed. However, transmission electron microscopy investigation revealed the emergence of hairpin dislocations when dose and accelerating voltage of Ge+ implantation were high. In specimens without carbon implantation, the hairpin dislocations could be readily removed by a 900 degrees C, 30 min anneal. For carbon-implanted specimens, the density of hairpin dislocations increased when R-p of carbon implantation was close to the (a/c) interface. The glide motion of hairpin dislocations was affected by Ge+-pre-amorphization conditions and was inhibited by the SiC complexes formed in the vicinity of dislocations so that they became rather difficult to anneal out of the specimens. (C) 1999 American Institute of Physics. [S0021-8979(99)06306-9].
Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation
(1999-09-29)
Chen, PS
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Hsieh, TE
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Chu, CH
;
材料科學與工程學系
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Department of Materials Science and Engineering
This work investigated the ion implantation induced solid phase epitaxy (SPE) of Si thin films prepared by low pressure chemical vapor deposition (LPCVD). Previous studies indicate that the residual layer at the interface between the Si thin film and single crystalline substrate is the major obstacle to the SPE process of Si film. In this work, Ge+ and Si+ ion were implanted to completely amorphize the Si film prepared by LPCVD. Ion implantation also mixed the interfacial oxide layer and its effects on subsequent epitaxial growth of Si film subjected to various annealing conditions were discussed as well. In addition, the specimen surface was modified by inductive couple plasma (ICP) process. The ICP modification using nitrogen gas could form a vacancy source on the sample surface to enhance the atomic diffusion rare and change the stress state in the vicinity of surface, thereby accelerating the SPE process. (C) 1999 Elsevier Science S.A. All rights reserved.
The CMP process and cleaning solution for planarization of strain-relaxed SiGe virtual substrates in MOSFET applications
(2006)
Shieh, MS
;
Chen, PS
;
Tsai, MJ
;
Lei, TF
;
電子工程學系及電子研究所
The effects of different polishing pads and slurry solid contents on the SiGe chemical mechanical polish (CMP) process were investigated. By optimizing the polishing conditions, a smooth strained-Si surface on a flattened Si0.8Ge0.2 buffer layer of 0.6 nm can be achieved. The novel cleaning solutions with various surfactants and chelating agents for post-CMP SiGe were studied. There was about 10% current enhancement of the optimal cleaning conditions, showing high performance in particle removal, metallic cleaning, and electrical characteristics. (c) 2005 The Electrochemical Society.
Via-filling capability of copper film by CVD
(2003-07-01)
Lin, CL
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Chen, PS
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Lin, YC
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Tsui, BY
;
Chen, MC
The via-filling properties of chemically-vapor-deposition (CVD) Cu film filled in deep submicrometer vias (diam of 0.11, 0.15 and 0.18 mum) were investigated with respect to various deposition parameters. A superior void-free via-filling by Cu film can be achieved at low temperature, low pressure, and high concentration of precursor species in the gas phase. However, these favorable conditions for void-free via-filling of Cu film also lead to slightly degraded film properties, including higher resistivity, higher content of impurities, degraded adhesion to substrate, and lower deposition rate, as compared with those obtained under the optimal deposition condition. Thus, a trade-off is needed between void-free via-filling and a superior film property. The key to achieve a void-free via-filling is to have a high probability of a re-emission event for the Cu-containing species inside the vias. Using helium (He) as the carrier gas is preferable to using hydrogen (H-2), because the hydrogen reduction reaction would enhance the deposition of Cu, resulting in a decreased probability of a re-emission event and thus degrading the capability of void-free via-filling. In this study, we have achieved void-free filling by CVD Cu film in deep submicrometer 0.11 mm diam vias with an aspect ratio of 9.1 at and below deposition temperatures of 160degreesC, using a precursor flow rate of 0.4 cm(3)/min and at a deposition pressure of 60 mTorr. (C) 2003 The Electrochemical Society.