Browsing by Author "Chen, Po-Cheng"

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Determination of s-d exchange coupling in GaMnN by time-resolved Kerr rotation spectroscopy
(2014-09-29)
Hsu, Wei-Ting
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Hsieh, Ting-Yen
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Chen, Hsin-Feng
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Huang, Feng-Wen
;
Chen, Po-Cheng
Coherent electron-spin dynamics in Ga1-xMnxN has been investigated by time-resolved Kerr rotation spectroscopy. The effective electron g factor shows a linear increase with the Mn concentration due to the s-d exchange coupling between the conduction electrons and the d-shell electrons of Mn3+ impurities. The magnitude and sign of the s-d exchange constant are determined precisely to be N-0 alpha = +0.23 +/- 0.02 eV, indicative of a ferromagnetic s-d exchange coupling in GaMnN. The determined N-0 alpha is consistent with the typical value found in most diluted magnetic semiconductors and reveals that GaMnN is indeed not an exception.
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
(2015)
Lee, Yao-Jen
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Cho, Ta-Chun
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Sung, Po-Jung
;
Kao, Kuo-Hsing
;
Hsueh, Fu-Kuo
A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (I-on by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (I-on/I-off > 10(7)) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.
Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps
(2012-08-01)
Tu, Shang-Ju
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Lee, Ming-Lun
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Yeh, Yu-Hsiang
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Huang, Feng-Wen
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Chen, Po-Cheng
"In this paper, air gaps were embedded in the n-GaN layer to improve light output power of InGaN-based light-emitting diodes (LEDs). Si ions (Si+28) were implanted on the n-GaN surface, causing a lattice constant disorder. Therefore, the GaN grown on the Si-implanted areas had a lower growth rate than the implantation-free regions. Without using a dielectric thin film, lateral epitaxial overgrowth technique was used to form air gaps above the implanted regions and below the active layers of InGaN LEDs. We proposed the growth mechanisms of GaN layer on the Si-implanted GaN templates and characterized the InGaN-based LEDs with embedded air gaps array. With a 20-mA current injection, experimental results indicate that light output power (LOP) of the proposed LEDs was enhanced by 36%, compared with those of the conventional LEDs. This enhancement can be attributed to the light scattering at the textured GaN/gap interfaces to increase the effective light escape cone in the LEDs. Based on ray tracing simulation, if the height and the width of bottom of gaps were increased to 3 mu m, the Lop could be enhanced over 70%."
Optical properties of Mn in regrown GaN-based epitaxial layers
(2012-04-01)
Huang, Feng-Wen
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Sheu, Jinn-Kong
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Tu, Shang-Ju
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Chen, Po-Cheng
;
Yeh, Yu-Hsiang
The memory effect and redistribution of manganese (Mn) into subsequently regrown GaN-based epitaxial layers by metalorganic chemical vapor deposition were revealed. Low-temperature up-converted photoluminescence (UPL) and the secondary ion mass spectrometry were performed on GaN-based epitaxial samples with and without Mn doping to study the effect of residual Mn on optical property. UPL emission, which originated from residual Mn doping in regrown InGaN quantum wells (QWs) because of the memory effect of the reactor, could be eliminated in an air-exposed and H-2-baking manner prior to the regrowth of the QWs. Considerable residual Mn background level and slow decay rate of Mn concentration tail were also observed in the regrown epitaxial layers, which could be attributed to the memory effect or surface segregation and diffusion from the Mn-doped underlying layer during regrowth in the Mn-free reactor. (C) 2012 Optical Society of America