Browsing by Author "Chen, RP"

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Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy
(2000-05-20)
Chen, RP
;
Lin, DS
;
物理研究所
;
Institute of Physics
Hydrogen recombinative desorption from a Si2H2 monohydride dimer on the Si(100) surface regenerates a dangling bond (DB) pair on the dimer. In this paper, we investigated the spatial distribution of the regenerated DB pairs on the Si(100)-2 x 1:H and disilane-passivated Si(100) surface using elevated temperature scanning tunneling microscopy (HT-STM) in the temperature range between 590 and 622 K. Experimental results indicate that the ends of one-dimensional (1D) monohydride dimer islands are preferred sites for DB pairs and a repulsive interaction occurs between two neighboring DB pairs in the same dimer row. (C) 2000 Elsevier Science B.V. All rights reserved.
Hydrogen-desorption kinetic measurement on the Si(100)-2x1 : H surface by directly counting desorption sites
(1999-09-15)
Lin, DS
;
Chen, RP
;
物理研究所
;
Institute of Physics
The desorption kinetics of hydrogen from the Si(100)-2x1:H monohydride surface was investigated by means of variable-temperature scanning-tunneling microscopy (STM) in the temperature range between 590 and 668 K. By directly counting the number of desorption sites in the STM images for various annealing time at several temperatures, an activation barrier of E-d = 2.22+/-0.20 eV and a pre-exponential factor of nu(d) = 3.4 x 10(13+/-0.3) s(-1) for the H-2 recombinative desorption are deduced. The sequential images acquired in real times show that hydrogen desorbs in a random manner and the interaction between two neighboring paired dangling bond sites is repulsive.
Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning tunneling microscopy
(2000-01-15)
Lin, DS
;
Ku, TS
;
Chen, RP
;
物理研究所
;
Institute of Physics
In this paper, we investigate the interaction of phosphine (PH3) on the Si(100)-2 x 1 surface at temperatures between 635 and 900 K. The hydrogen desorption, growth mode, surface morphology, and chemical composition and ordering of the surface layer are examined by synchrotron radiation core-level photoemission and real-time high-temperature scanning tunneling microscopy. The P 2p core-level spectra indicate that decomposition of PHn is complete above similar to 550 K and the maximum P coverage is strongly influenced by the growth temperature, which governs the coverage of H-terminated sites. The scanning tunneling microscopy (STM) images taken at real time during PH3 exposure indicate that a surface phosphorus atom readily and randomly displaces one Si atom from the substrate. The ejected Si diffuses, nucleates, and incorporates itself into islands or step edges, leading to similar growth behavior as that found in Si chemical vapor deposition. Line defects both perpendicular and parallel to the dimer rows are observed on the nearly P-saturated surface. Perpendicular line defects act as a strain relief mechanism. Parallel line defects result from growth kinetics. STM images also indicate that incorporating a small amount of phosphorus eliminates the line defects in the Si(100)-2 x n surface.