Browsing by Author "Chen, S. -H."

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Detection of Escherichia coli O157 : H7 using An nanoparticles mediator on an electrochemical amperometric immunobiosensor
(2007)
Chen, S. -H.
;
Lin, Y. -H.
;
Chuang, Y. -C.
;
Lin, Y. -R.
;
Chang, C. A.
Detection of Escherichia coli O157 : H7 using Au nanoparticles mediator on an electrochemical amperometric immunobiosensor
(2007-01-01)
Chen, S. -H.
;
Lin, Y. -H.
;
Chuang, Y. -C.
;
Lin, Y. -R.
;
Chang, C. A.
Detection of Escherichia coli O157 : H7 using Au nanoparticles mediator on an electrochemical amperometric immunobiosensor
(2007)
Chen, S. -H.
;
Lin, Y. -H.
;
Chuang, Y. -C.
;
Lin, Y. -R.
;
Chang, C. A.
Distinct Dynamic Behaviors of High-Power Photonic-Transmitters Based on Uni-Traveling Carrier and Separated-Transport-Recombination Photodiodes
(2009)
Li, Yu-Tai
;
Yang, Chan-Shan
;
Pan, Ci-Ling
;
Shi, J. -W.
;
Huang, C. -Y.
We demonstrate two high-performance photonic-transmitters based on uni-traveling-carrier-photodiode (UTC-PD) and separated-transport-recombination-photodiode (STR-PD). Thanks to recombination center, STR-PD exhibits comparable maximum-peak-power and electrical pulse-width with much smaller photocurrents and less serious device-heating to those of UTC-PD.
Improvement on CDM ESD Robustness of High-Voltage Tolerant nLDMOS SCR Devices by Using Differential Doped Gate
(2014)
Chen, S. -H.
;
Linten, D.
;
Scholz, M.
;
Hellings, G.
;
Boschke, R.
Early failure has been observed during CDM ESD stress on high-voltage tolerant nLDMOS-SCR devices in a standard low-voltage CMOS technology due to the gate oxide (GOX) degradation. In this work, we propose a special p+/n+ differential doped gate which boosts the CDM ESD failure current level with a factor of 3 to 9.
Latchup in Bulk FinFET Technology
(2017-01-01)
Dai, C. -T.
;
Chen, S. -H.
;
Linten, D.
;
Scholz, M.
;
Hellings, G.
Latchup (LU) had been considered to be less important in advanced CMOS technologies. However, I/O interface and analog applications can still operate at high voltage (e.g., 1.8V or 3.3V) in sub-20nm bulk FinFET technologies. LU threats are never eliminated and the sensitivity towards LU is increased in bulk FinFET technology.