Browsing by Author "Chen, SB"

Now showing 1 - 9 of 9

Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application
(2002-04-29)
Chen, SY
;
Sun, CL
;
Chen, SB
;
Chin, A
;
材料科學與工程學系
We have investigated the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6 nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied +/-10 V bias. However, the leakage current of BLT on Al2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down. (C) 2002 American Institute of Physics.
Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si
(2002-03-18)
Sun, CL
;
Chen, SY
;
Chen, SB
;
Chin, A
;
材料科學與工程學系
The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Al2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700 degreesC-950 degreesC increases with increasing annealing temperature. At the highest annealing temperature of 950 degreesC, a large ferroelectric memory window of 13 V is obtained under +/-15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process. (C) 2002 American Institute of Physics.
Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chan, KT
;
Chin, A
;
Hsieh, JC
We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstrom
(2000)
Chin, A
;
Wu, YH
;
Chen, SB
;
Liao, CC
;
Chen, WJ
High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Angstrom, leakage current of 0.06 and 0.4A/cm(2) and D-it of both 3x10(10) eV(-1)/cm(2), respectively. The high K is further evidenced from high MOSFET's I-d and g(m) with low I-off Good SILC and Q(BD) are obtained and comparable with. SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H-2 annealing up to 550 degrees C.
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
High-quality thermal oxide grown on high-temperature-formed SiGe
(2000-05-01)
Wu, YH
;
Chen, SB
;
Chin, A
;
Chen, WJ
;
電子工程學系及電子研究所
We have developed a high-quality gate oxide on Si0.6Ge0.4 with a 30 Angstrom Si top layer. The good oxide integrity comparable to conventional thermal oxide is demonstrated by the low interface trap density of 6.2 X 10(10) eV(-1) cm(-2), low bride charge of 5.8 X 10(10) cm(-2), small leakage current at 3.3 V of 4.2 x 10(-8) A/cm(2), high breakdown field of 13.8 MV/cm, good charge-to-breakdown of 5.2 C/cm(2), and small stress-induced leakage current. This good oxide integrity is directly related to our previously developed SiGe formed by solid phase epitaxy at high temperatures that is stable during thermal oxidation. This simple process is fully compatible with existing very large scale integration technology. (C) 2000 The Electrochemical Society. S0013-4651(99)10-038-7. All rights reserved.
La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics
(2002-12-01)
Huang, CH
;
Chen, SB
;
Chin, A
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have studied the high-k La2O3 p-MOSFETs on Si0.3Ge0.7 substrate. Nearly identical gate oxide current, capacitance density, and time-dependent dielectric breakdown (TDDB) re obtained for La2O3/Si and La2O3/Si0.3Ge0.7 devices that indicate the excellent Si0.3Ge0.7 quality without any side effect. The measured hole mobility in nitrided La2O3/Si p-MOSFETs is 31 cm(2)/V-s and comparable with published data in nitrided HfO2/Si p-MOSFETs. In sharp contrast, a higher mobility of 55 cm(2)/V-s is measured in La2O3/Si0.3Ge0.7 p-MOSFET, which is improved by 1.8 times as compared with La2O3/Si control devices. The high mobility in Si0.3Ge0.7 p-MOSFET gives another step for integrating high-k gate dielectrics into VLSI process.
RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
(2002)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MINI capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MINI capacitor has good device integrity of low leakage current of 4.3x10(-8) A/cm(2), small frequency-dependent capacitance reduction, and good reliability.
RF noise characteristics of high-k AlTiOx and Al2O3 gate dielectrics
(2002-07-01)
Chen, SB
;
Huang, CH
;
Chin, A
;
Lin, J
;
Jou, JP
We have characterized the radio frequency (rf) noise in high-k Al2O3 and AlTiOx gate dielectrics, which have respective effective oxide thickness (EOT) of 17.2 and 12.5 Angstrom. The measured noise figure in gate dielectric is material dependent and sensitive to dielectric defect after stress. Although the high-k AlTiOx gate dielectric has lower EOT, it has a higher noise figure than others. From the simulation in our proposed equivalent circuit model, the dominant noise is thermal noise and the reason for increasing noise figure after stress is due to additional parallel resistance by trap-assisted tunneling. (C) 2002 The Electrochemical Society.