Browsing by Author "Chen, SL"

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A new output buffer for 3.3-V PCI-X application in a 0.13-mu m 1/2.5-V
(2004)
Chen, SL
;
Ker, MD
;
電機學院
;
College of Electrical and Computer Engineering
An output buffer with low-voltage devices to driver high-voltage signals for PCI-X applications is proposed in this paper. Because PCI-X is a 3.3-V interface, the high-voltage gate-oxide stress is a serious problem to design PCI-X l/O circuits in a 0.13-mum 1/2.5-V CMOS process. The simulation results show that the proposed output buffer can be operated at 133 MHz without causing high-voltage gate-oxide stress problem in the 3.3-V P I-X interface. Besides, a level converter with only IN and 2.5-V devices that can converter 0/1-V voltage swing to 1/3.3-V voltage swing is also proposed in this paper. The testchip to verify this new proposed output buffer is now under fabrication. The measured results will be shown in the presentation.
A new Schmitt trigger circuit in a 0.13-mu m 1/2.5-V CMOS process to receive 3.3-V input signals
(2005-07-01)
Chen, SL
;
Ker, MD
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new Schmitt trigger circuit, which is implemented by low-voltage devices to receive the high-voltage input signals without gate-oxide reliability problem, is proposed. The new proposed circuit, which can be operated in a 3.3-V signal environment without suffering high-voltage gate-oxide overstress, has been fabricated in a 0.13-mu m 1/2.5-V 1P8M CMOS process. The experimental results have confirmed that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 and 2.5 V, respectively. The new proposed Schmitt trigger circuit is suitable for mixed-voltage input-output interfaces to receive input signals and reject input noise.
Behavior of concrete slabs externally reinforced with CFRP laminates
(2001)
Chen, CC
;
Chen, SL
;
土木工程學系
;
Department of Civil Engineering
An experiment was conducted to investigate the behavior and punching shear strengths of the concrete slab-column connections externally reinforced with carbon fiber reinforced plastic (CFRP) laminates. Parameters studied and designed in twelve specimens included the concrete compressive strength and the number of layers of CFRP laminates. Square specimens were simply supported along four sides and the monotonically concentrated load was applied to the stub column during the test. Test results showed that the ultimate punching shear strength of the flat slab can be substantially increased by the application of the CFRP laminates.
Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes
(2006-05-01)
Ker, MD
;
Chen, SL
;
Tsai, CS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new charge pump circuit with consideration of gateoxide reliability is designed with two pumping branches in this paper. The charge transfer switches in the new proposed circuit can be completely turned on and turned off, so its pumping efficiency is higher than that of the traditional designs. Moreover, the maximum gate-source and gate-drain voltages of all devices in the proposed charge pump circuit do not exceed the normal operating power supply voltage (VDD). Two test chips have been implemented in a 0.35-mu m 3.3-V CMOS process to verify the new proposed charge pump circuit. The measured output voltage of the new proposed four-stage charge pump circuit with each pumping capacitor of 2 pF to drive the capacitive output load is around 8.8 V under 3.3-V power supply (VDD = 3.3 V), which is limited by the junction breakdown voltage of the parasitic pn-junction in the given process. The new proposed circuit is suitable for applications in low-voltage CMOS processes because of its high pumping efficiency and no overstress across the gate oxide of devices.
Design on mixed-voltage I/O buffer with blocking NMOS and dynamic gate-controlled circuit for high-voltage-tolerant applications
(2005)
Ker, MD
;
Chen, SL
;
Tsai, CS
;
電機學院
;
College of Electrical and Computer Engineering
A new mixed-voltage I/O buffer with a blocking NMOS and a dynamic gate-controlled circuit for high-voltage-tolerant applications is proposed. The new proposed I/O buffer can receive the input signals with the voltage swing twice as high as the normal power supply voltage (VDD), which has been fabricated in a 0.25-mu m CMOS process to receive 5-V input signals without suffering gate-oxide reliability and circuit leakage issues. The new proposed mixed-voltage I/O buffer can be easily scaled down toward 0.18-mu m (or below) CMOS process to serve different mixed-voltage I/O interfaces, such as 1.8/3.3-V or 1.2/2.5-V applications.
Efficient UV photoluminescence from monodispersed secondary ZnO colloidal spheres synthesized by sol-gel method
(2005-04-15)
Cheng, HM
;
Hsu, HC
;
Chen, SL
;
Wu, WT
;
Kao, CC
ZnO colloidal spheres were synthesized by sol-gel method with a narrow size distribution. We controlled the size of the spheres during the secondary reaction with various amounts of primary reaction supernatant. The optimized condition of ZnO powders with an average diameter of 185 nm was obtained for structure analysis and study of optical properties. Transmission electron microscopy and X-ray diffraction reveal that the spheres are polycrystalline in the pure wurtzite phase. Markedly enhanced near-band-edge ultraviolet pbotoluminescence and significantly reduced defect-related visible emission were also observed. We attribute this observation to the localized bound excitons with high density of defect states. In addition, broad yellow emission and green emission were observed when the powders were post-annealed at 500 degrees C in air ambience. The origins of the defect-induced visible emissions are attributed to oxygen interstitials and oxygen vacancies. (c) 2005 Elsevier B.V. All rights reserved.
Electrical characteristics and annealing study of boron-doped polycrystalline diamond films
(1995-12-01)
Chen, SH
;
Chen, SL
;
Tsai, MH
;
Shyu, JJ
;
Chen, CF
Annealing processes are an important area of fundamental research within the field of diamond electronic applications. In this study, annealing was applied to as-grown boron-doped diamond films. The current-voltage (I-V) characteristics of the Al/boron-doped diamond films were also investigated. First, the conductivity of films was examined to determine the effect of annealing on boron-doped diamond films. Experimental results indicated that the activation energy for the as-deposited diamond films (intrinsic or light boron-doped) is about 0.38 eV. After annealing, the activation energy did not change. However, the activation energy of the heavily doped films remarkably would change to 0.014 eV after annealing. Next, Fourier transform infrared spectroscopy (FTIR) and cathodoluminescence (CL) were performed to understand more clearly the correlation between the activation energy and the annealing effect on B-doped diamond films. These results revealed that for the lightly B-doped films, the boron atoms were effectively activated at the substitutional site. For the heavily doped case, boron was initially located in an inactive site (e.g., grain boundary, interstitial or clustering sites) and would diffuse into the substitutional site after 900 degrees C annealing.
Individual and combined toxicity of nitriles and aldehydes to Raphidocelis subcapitata
(2005-05-01)
Chen, CY
;
Chen, SL
;
Christensen, ER
;
環境工程研究所
;
Institute of Environmental Engineering
A closed- system algal toxicity test with no headspace was applied to evaluate the toxicity of I I aldehydes and two nitrites to Raphidocelis subcapitata. Algal growth rate and dissolved oxygen (DO) production were used as the test endpoints. Compared to literature data, our test results based on the endpoint of DO production is 2.5 to 257 times more sensitive than the conventional algal batch tests. In addition, our analyses show that different relative toxicity relationships may be observed when different test methods or different endpoints are applied. The test alga was found to be quite sensitive to aldehydes, and a quantitative structure- activity relationship (QSAR) relationship was established based on the n-octanol/water partition coefficient (log K,,.). This study also evaluated the combined effects of aldehydes and nitriles. Four synergistic joint actions related to majononitrile were identified. On the other hand, most of the combined effects between aldehydes and acetonitrile were antagonistic. In general, we find that greater-than-additive effects mainly are associated with toxicants displaying flat dose-response curves, and less-than-additive effects may be related to certain steep-slope chemicals. Model analyses show that the above mixture toxicity behavior may be due to response addition or response multiplication joint action modes.
Interconnect accelerating techniques for sub-100-nm gigascale systems
(2004-11-01)
Huang, HY
;
Chen, SL
;
電機學院
;
College of Electrical and Computer Engineering
This work describes new circuits called capacitor coupling trigger and capacitor coupling accelerator (CCA) circuits used to reduce the long interconnect RC delay in sub-100-nm processes. The proposed circuits use capacitors to split the output driving paths to eliminate the short-circuit current and thus improve the signal transition time. Besides, the capacitor coupling technique is applied to adjust the gate threshold voltage of the proposed circuits and isolate the input signal from the output driving transistors. The proposed circuits are faster than the prior circuits. Furthermore, the CCA can be applied to bi-directional interface, multiports bus, field-programmable gate array interconnections, and complex dynamic logic circuits.
Ultrathick SU-8 mold formation and removal, and its application to the fabrication of LIGA-like micromotors with embedded roots
(2002-12-01)
Ho, CH
;
Chin, KP
;
Yang, CR
;
Wu, HM
;
Chen, SL
In this study, a novel method to completely remove crosslinked SU-8 without remnants of the resist or destroying the electroplated microstructures was utilized. The LIGA-like fabrication of a side-driven electrostatic micromotor was employed as an example to describe polymerized SU-8 resist removal. Using near-UV light, nickel components of the micromotor were electroplated 160 Pm in a 300 mum-thick SU-8 mold. A comparison of various approaches based on a commercial remover was performed during the mold removal process. Experimental results showed that components having 1 mum-deep substructures embedded in the substrate could provide stronger structures to withstand the internal stress due to the photoresist deformation. In addition, when the height of the electroplated structure was below two-thirds of the photoresist mold thickness, the net clamping force on the resist could be effectively reduced to make the removal of SU-8 with heated remover successfully. The rotor and the stator with embedded roots were released cleanly and thereby, assembled to form a high-aspect-ratio micromotor. The technique of SU-8 removal and LIGA-like process presented herein can be applied to the fabrication of other high-powered microactuators. (C) 2002 Elsevier Science B.V. All rights reserved.