Browsing by Author "Chen, Sheng-Kai"

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A New Charge-Trap-Engineered Memory Device with Silicon-Oxide-Nitride-Vacuum-Silicon (SONVAS) Structure for LTPS-TFT-Based Applications
(2010)
Liao, Ta-Chuan
;
Wu, Chun-Yu
;
Chen, Sheng-Kai
;
Yu, Ming H.
;
Kang, Tsung-Kuei
For the first time, a new Silicon-Oxide-Nitride-Vacuum-Silicon (SONVAS) LTPS-TFT-based charge-trapping memory integrated on a gate-all-around field-enhanced-nanowire architecture was demonstrated. The vacuum, simply formed by an in-situ encapsulation, substituted for the traditional tunneling oxide. Due to the lowest-k and empty properties of vacuum, SONVAS features electric field enhancement in tunneling layer and immunity against the creation of interface traps and the charge trapping in the damaged tunneling oxide during P/E cycling, resulting in the much-improved P/E efficiency and reliability, respectively. Therefore, such vacuum-introduced SONVAS memory device with process simplicity is very suitable for the future system-on-panel (SOP) and 3D-stacking flash applications.
A Novel LTPS-TFT-Based Charge-Trapping Memory Device with Field-Enhanced Nanowire Structure
(2009)
Liao, Ta-Chuan
;
Chen, Sheng-Kai
;
Yu, Ming H.
;
Wu, Chun-Yu
;
Kang, Tsung-Kuei
A novel gate-all-around low-temperature poly-Si (LIPS) thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with field-enhanced nanowire (FEN) structure has been proposed to improve the program and erase (P/E) performance. Each nanowire inherently had three sharp corners fabricated simply by sidewall spacer formation to obtain high local electric fields. The field-enhanced carrier tunneling via such a structure led to faster PIE speed and wider memory window for the FEN-TFT SONOS as compared to the conventional planar (CP) counterpart. The improvement was also further verified with the simulation results. Such a high-performance FEN-TFT SONOS memory with process simplicity is very suitable for future system-on-panel (SOP) applications.
Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation
(2010-05-01)
Wu, Chun-Yu
;
Liao, Ta-Chuan
;
Yu, Ming-H
;
Chen, Sheng-Kai
;
Tsai, Chung-Min
A novel omega-shaped-gated (Omega-Gate) poly-Si thin-film-transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory devices fabricated with a simple process have been proposed for the first time. The Omega-Gate structure inherently covered two sharp corners manufactured simply via a side-wall spacer formation. Due to the sharp corner geometry, the local electric fields across the tunneling oxide could be enhanced effectively, thus improving the memory performance. Based on this field enhanced scheme, the Omega-Gate TFT SONOS revealed excellent program/erase (P/E) efficiency and larger memory window as compared to the conventional planar (CP) counterparts. In addition, owing to the better gate controllability, the Omega-Gate TFT SONOS also exhibited superior transistor performance with a much higher on-current, smaller threshold voltage, and steeper subthreshold swing. Therefore, such an Omega-Gate TFT SONOS memory is very promising for the embedded flash on the system-on-panel applications. (C) 2010 Elsevier Ltd. All rights reserved.
Novel Omega-Shaped-Gated TFT SONOS Memory
(2009)
Liao, Ta-Chuan
;
Chen, Sheng-Kai
;
Kang, Tsung-Kuei
;
Hsu, Pang-Yu
;
Lin, Chia-Min
A novel omega-shaped-gated (Omega-Gate) polycrystalline-silicon thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with field-enhanced nanowire (FEN) structure has been proposed to improve the program and erase (P/E) performance. Each nanowire inherently had twin sharp corners fabricated simply by sidewall spacer formation to obtain high local electric fields. The field-enhanced carrier tunneling via such a structure led to faster P/E speed and wider memory window for the Omega-Gate SONOS as compared to the conventional planar (CP) counterpart. Such an Omega-Gate-TFT SONOS memory using a simple process is very suitable for future system-on-panel applications.