Browsing by Author "Chen, Sheng-Wen"

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A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based alpha-SiCN:H/alpha-SiCO:H Diffusion Barrier Films
(2012-03-01)
Chen, Sheng-Wen
;
Wang, Yu-Sheng
;
Hu, Shao-Yu
;
Lee, Wen-Hsi
;
Chi, Chieh-Cheng
Amorphous nitrogen-doped silicon carbide (alpha-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs) showed that 3MS alpha-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the alpha-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O) substituted TEOS oxide capped on 4MS alpha-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.
Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
(2012-03-01)
Chen, Sheng-Wen
;
Kung, Te-Ming
;
Liu, Chuan-Pu
;
Chang, Shih-Chieh
;
Cheng, Yi-Lung
In this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R-p) is proportional to the intensity ratio of Cu2O/[Cu(OH)(2) + CuO]. (C) 2012 The Japan Society of Applied Physics