Browsing by Author "Chen, Shih C."

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High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs
(2007-02-01)
Hung, B. F.
;
Wu, C. H.
;
Chin, Albert
;
Wang, S. J.
;
Yen, F. Y.
A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.