Browsing by Author "Chen, Shih-Yang"

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Bipolar resistive switching of chromium oxide for resistive random access memory
(2011-08-01)
Chen, Shih-Cheng
;
Chang, Ting-Chang
;
Chen, Shih-Yang
;
Chen, Chi-Wen
;
Chen, Shih-Ching
This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
(2011)
Chen, Shih-Cheng
;
Chang, Ting-Chang
;
Chen, Shih-Yang
;
Li, Hung-Wei
;
Tsai, Yu-Ting
This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr(2)O(3)-based resistive random access memory (RRAM) with Pt/Cr(2)O(3)/TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/Cr(2)O(3) and Cr(2)O(3)/TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr(2)O(3) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518710] All rights reserved.