Browsing by Author "Chen, Szu-Yi"

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Comparative study of single and multiemissive layers in inverted white organic light-emitting devices
(2006-09-11)
Chu, Ta-Ya
;
Chen, Jenn-Fang
;
Chen, Szu-Yi
;
Chen, Chin H.
;
電子物理學系
The authors have fabricated and compared highly efficient inverted white organic light-emitting devices (WOLEDs) with a single emission layer (SEL) and with a multiemission layer (MEL). The efficiency levels of the WOLEDs with a SEL and a MEL achieved 13.0 cd/A, 10.6 lm/W and 11.3 cd/A, 7.3 lm/W, respectively. The projected half lifetime of a SEL device under an initial luminance of 400 cd/m(2) is expected to be over 34 000 h, which is five times better than that of a MEL device of 6350 h. The Commission International de l'Eclairage coordinates of a SEL device are not affected by aging. (c) 2006 American Institute of Physics.
High-Efficiency Inverted Transparent Blue Organic Light-Emitting Devices
(2006)
Chen, Szu-Yi
;
Chu, Ta-Ya
;
Chen, Chao-Jung
;
Chen, Jenn-Fang
;
Chen, Chin H.
We report efficient inverted transparent blue OLEDs (ITOED) with an hole injection layer prepared by co-evaporation of WO3 with NPB, which achieved a total current efficiency 0 10.7 cd/A at 20 mA/cm(2) with light emits from both ITO bottom cathode and Au top anode in about 3:1 ratio.
Highly efficient and stable inverted bottom-emission organic light emitting devices
(2006-07-31)
Chu, Ta-Ya
;
Chen, Jenn-Fang
;
Chen, Szu-Yi
;
Chen, Chao-Jung
;
Chen, Chin H.
The authors report the development of highly efficient and stable C545T doped green fluorescent Alq(3) inverted bottom-emission organic light emitting device (OLED), with a device configuration of ITO/Mg/Cs(2)O:Bphen/Alq(3)/C545T:Alq(3)/NPB/WO(3)/Al, that achieved a maximum current efficiency of 23.7 cd/A and a power efficiency of 12.4 lm/W which are two times better than those of the conventional OLED. At a brightness level of 100 cd/m(2), the device required driving current density only as low as 0.5 mA/cm(2) at a driving voltage of only 5.0 V and its half-lifetime T(1/2) in excess of 104 000 h. (c) 2006 American Institute of Physics.
Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement
(2006-07-31)
Chen, Szu-Yi
;
Chu, Ta-Ya
;
Chen, Jenn-Fang
;
Su, Chien-Ying
;
Chen, Chin H.
Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq(3), the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 lm/W at 20 mA/cm(2). The 20% decay lifetime (t(80)) of Cs2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h). (c) 2006 American Institute of Physics.